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PDF L2SA1576AQT1G Data sheet ( Hoja de datos )
| Número de pieza | L2SA1576AQT1G | |
| Descripción | General Purpose Transistors | |
| Fabricantes | LRC | |
| Logotipo |  |
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LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
PNP Silicon
z We declare that the material of product compliance with RoHS requirements.
ORDERING INFORMATION
Device
L2SA1576AQLT1G Series
L2SA1576AQLT3G Series
Package
SC-70
SC-70
Shipping
3000/Tape & Reel
10000/Tape & Reel
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Collector–Emitter Voltage
Collector–Base Voltage
V CEO
V CBO
–50
–60
V
V
Emitter–Base Voltage
V EBO
–6.0
V
Collector Current — Continuous
Collector power dissipation
Junction temperature
Storage temperature
IC
PC
Tj
T stg
–150
mAdc
0.15 W
150 °C
-55 ~+150 °C
L2SA1576AQT1G Series
3
1
2
SC-70/SOT– 323
3
COLLECTOR
1
BASE
2
EMITTER
DEVICE MARKING
L2SA1576AQT1G =FQ L2SA1576ART1G=FR L2SA1576AST1G =FS
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Collector–Emitter Breakdown Voltage
(IC = –1 mA)
Emitter–Base Breakdown Voltage
(IE = – 50 µA)
Collector–Base Breakdown Voltage
(IC = – 50 µA)
Collector Cutoff Current
(VCB = – 60 V)
Emitter cutoff current
(VEB = – 6 V)
Collector-emitter saturation voltage
(IC/ IB = – 50 mA / – 5m A)
DC current transfer ratio
(V CE = – 6 V, I C= –1mA)
Transition frequency
(V CE = – 12 V, I E= 2mA, f=30MHz )
Output capacitance
(V CB = – 12 V, I E= 0A, f =1MHz )
Symbol
V (BR)CEO
V (BR)EBO
V (BR)CBO
I CBO
I EBO
V CE(sat)
h FE
fT
C ob
Min
– 50
–6
– 60
—
—
—
120
—
—
h FE values are classified as follows:
*Q
R
hFE
120~270
180~390
S
270~560
Typ Max Unit
— —V
— —V
— —V
— – 0.1 µA
— – 0.1 µA
— -0.5 V
–– 560 ––
140 –– MHz
4.0 5.0 pF
Rev.O 1/4
Free Datasheet http://www.datasheet4u.com/
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet L2SA1576AQT1G.PDF ] | |
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