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PDF CDBD8060-HF Data sheet ( Hoja de datos )
| Número de pieza | CDBD8060-HF | |
| Descripción | (CDBD8060-HF / CDBD8100-HF) Chip Schottky Barrier Rectifier | |
| Fabricantes | Comchip Technology | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de CDBD8060-HF (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
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Chip Schottky Barrier Rectifier
CDBD8060-HF Thru. CDBD8100-HF
Reverse Voltage: 60 to 100 Volts
Forward Current: 8.0 Amp
RoHS Device
Halogen Free
Features
-Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
-Low profile surface mounted application in order to
optimize board space.
-Low power loss, high efficiency.
-High current capability, low forward voltage drop.
-High surge capability.
-Guardring for overvoltage protection.
-Ultra high-speed switching.
-Silicon epitaxial planar chip, metal silicon junction.
-Lead-free parts meet environmental standards of
MIL-STD-19500 /228
Mechanical data
-Epoxy: U/L 94-V0 rate flame retardant.
-Case: TO-263/D2PAK, Transfer Molded.
-Terminals: solderable per MIL-STD-202,
method 208.
-Polarity: As marked.
-Weunting Position: Any
-Weight:1.46 gram(approx.).
2=4
3
D2PAK
0.059(1.50)
0.031(0.80)
0.413(10.50)
0.394(10.00)
4
0.185(4.70)
0.169(4.30)
0.370(9.40)
0.327(8.30)
12 3
0.114(5.30)
0.098(4.40)
0.063(1.60)
0.055(1.30)
0.205(5.20)
0.189(4.80)
0.055(1.40)
0.047(1.20)
0.024(0.60)
0.014(0.35)
0.106(2.70)
0.091(2.30)
Dimensions in inches and (millimeters)
Maximum Ratings (At Ta=25 OC, unless otherwise noted)
Parameter
Symbol
Maximum Recurrent peak reverse voltage
VRRM
CDBD
8060-HF
60
CDBD
8100-HF
100
Unit
V
Maximum RMS voltage
VRMS
42
70 V
Maximum DC blocking voltage
VDC 60
100 V
Forward rectified current (See fig. 1)
IO 8.0 A
Maximum forward voltage at IO
Forward surge current, 8.3ms single half sine-wave superimposed on
rated load (JEDEC method)
VF
IFSM
0.75 0.85
175
V
A
Maximum Reverse current at 25°C per leg (Note1)
Maximum Reverse current at 100°C per leg (Note1)
Typical Thermal resistance junction to case Per Leg
Operating temperature range
IR 5.0 mA
IR 50 mA
RθJC
4.0 °C/W
TJ
-55 to +150
°C
Storage temperature range
TSTG
-55 to +150
°C
Notes: 1. Pulse Test: 300µS pulse width, 1% duty cycle.
QW-JB027
Comchip Technology CO., LTD.
REV: A
Page 1
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| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet CDBD8060-HF.PDF ] | |
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