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PDF CDBD8060-G Data sheet ( Hoja de datos )
| Número de pieza | CDBD8060-G | |
| Descripción | (CDBD8060-G / CDBD8100-G) Chip Schottky Barrier Rectifier | |
| Fabricantes | Comchip Technology | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de CDBD8060-G (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
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Chip Schottky Barrier Rectifier
Comchip
SMD Diode Specialist
CDBD8060-G Thru. CDBD8100-G
Reverse Voltage: 60 to 100 Volts
Forward Current: 8.0 Amp
RoHS Device
Features
-Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
-Low profile surface mounted application in order to
optimize board space.
-Low power loss, high efficiency.
-High current capability, low forward voltage drop.
-High surge capability.
-Guardring for overvoltage protection.
-Ultra high-speed switching.
-Silicon epitaxial planar chip, metal silicon junction.
-Lead-free parts meet environmental standards of
MIL-STD-19500 /228
Mechanical data
-Epoxy: U/L 94-V0 rate flame retardant.
-Case: TO-263/D2PAK, Transfer Molded.
-Terminals: Solderable per MIL-STD-202,
method 208.
-Polarity: As marked.
-Weunting Position: Any
-Weight:1.46 gram(approx.).
2=4
3
TO-263/D2PAK
0.059(1.50)
0.031(0.80)
0.413(10.50)
0.394(10.00)
4
0.185(4.70)
0.169(4.30)
0.055(1.40)
0.047(1.20)
0.370(9.40)
0.327(8.30)
12 3
0.114(5.30)
0.098(4.40)
0.063(1.60)
0.055(1.30)
0.205(5.20)
0.189(4.80)
0.024(0.60)
0.014(0.35)
0.106(2.70)
0.091(2.30)
Dimensions in inches and (millimeters)
Maximum Ratings (At Ta=25 OC, unless otherwise noted)
Parameter
Symbol
Maximum Recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Forward rectified current (See fig. 1)
Maximum forward voltage at IO
Forward surge current, 8.3ms single half sine-wave superimposed on
rated load (JEDEC method)
Maximum Reverse current at 25°C per leg (Note1)
Maximum Reverse current at 100°C per leg (Note1)
Typical Thermal resistance junction to case Per Leg
Operating temperature range
Storage temperature range
Notes: 1. Pulse Test: 300µS pulse width, 1% duty cycle.
VRRM
VRMS
VDC
IO
VF
IFSM
IR
IR
RθJC
TJ
TSTG
CDBD
8060-G
CDBD
8100-G
60 100
42 70
60 100
8.0
0.75 0.85
175
5.0
50
4.0
-55 to +150
-55 to +150
Unit
V
V
V
A
V
A
mA
mA
°C/W
°C
°C
QW-BB047
Comchip Technology CO., LTD.
REV:A
Page 1
Free Datasheet http://www.datasheet4u.com/
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet CDBD8060-G.PDF ] | |
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