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PDF NCP5359 Data sheet ( Hoja de datos )
| Número de pieza | NCP5359 | |
| Descripción | Gate Driver | |
| Fabricantes | ON Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de NCP5359 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
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NCP5359
Gate Driver for Notebook
Power Systems
The NCP5359 is a high performance dual MOSFET gate driver
optimized to drive the gates of both high−side and low−side power
MOSFETs in a synchronous buck converter. Each of the drivers can
drive up to 3 nF load with a 25 ns propagation delay and 20 ns
transition time.
Adaptive nonoverlap and power saving operation circuit can
provide a low switching loss and high efficiency solution for notebook
and desktop systems.
A high floating top driver design can accommodate VBST voltage
as high as 35 V, with transient voltages as high as 35 V. Bidirectional
EN pin can provide a fault signal to controller when the gate driver
fault detect under OVP, UVLO occur. Also, an undervoltage lockout
function guarantees the outputs are low when supply voltage is low,
and a thermal shutdown function provides the IC with
overtemperature protection.
Features
• Faster Rise and Fall Times
• Thermal Shutdown Protection
• Adaptive Nonoverlap Circuit
• Floating Top Driver Accommodates Boost Voltages of up to 35 V
• Output Disable Control Turns Off Both MOSFETs
• Complies with VRM 11.1 Specifications
• Undervoltage Lockout
• Power Saving Operation Under Light Load Conditions
• Thermally Enhanced Package
• These are Pb−Free Devices
Typical Applications
• Power Solutions for Desktop and Notebook Systems
© Semiconductor Components Industries, LLC, 2009
February, 2009 − Rev. 3
1
http://onsemi.com
8
1
SOIC−8
D SUFFIX
CASE 751
MARKING
DIAGRAMS
8
N5359
ALYW
G
1
DFN−10
MN SUFFIX
CASE 485C
N5359
ALYW
G
A = Assembly Location
L = Wafer Lot
Y = Year
W = Work Week
G = Pb−Free Package
PIN CONNECTIONS
1
BST
PWM
EN
VCC
8
DRVH
SW
GND
DRVL
1
BST
PWM
EN
VCC
VCC
10
DRVH
SW
GND
GND
DRVL
(Top View)
ORDERING INFORMATION
Device
Package
Shipping†
NCP5359DR2G
NCP5359MNR2G
SOIC−8
(Pb−Free)
DFN−10
(Pb−Free)
2500 Tape & Reel
3000 Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Publication Order Number:
NCP5359/D
Free Datasheet http://www.datasheet4u.com/
1 page  
NCP5359
ELECTRICAL CHARACTERISTICS (VCC = 12 V, TA = 0°C to +85°C, VEN = 5 V unless otherwise noted)
Characteristics
Symbol
Test Conditions
Min Typ
Supply Voltage
VCC Operating Voltage
Power ON Reset threshold
Supply Current
VCC
VPOR
10
2.8
VCC Quiescent Supply Current in
Normal Operation
VCC Standby Current
BST Quiescent Supply Current in
Normal Operation
BST Standby Current
Undervoltage Lockout
IVCC_NORM
IVCC_SBC
IBST1_normal
IBST2_normal
IBST1_SD
IBST2_SD
EN = 5 V, PWM = OSC, FSW = 100 k
CLOAD = 0 p
EN = GND; No switching
PWM = +5 V, SW = 0 V
PWM = GND, SW = 0 V
PWM = +5 V
PWM = GND
2.0
0.5
1.0
1.0
0.25
0.25
VCC Start Threshold
VCC UVLO Hysteresis
Output Overvoltage Trip Threshold at
Startup
VCCTH
VCCHYS
OVPSU
Power Startup time, VCC > 9 V.
(Without trimming)
8.2 8.7
1.0
1.8
EN Input
Input Voltage High
Input Voltage Low
Hysteresis (Note 5)
Enable Pin Sink Current
Propagation Delay Time (Note 5)
PWM Input
VEN_HI
VEN_LOW
VEN_HYS
IEN_SINK
tpdhEN
tpdlEN
VCC = 5.5 V
2.0
500
5.0
20
20
DRVH Comparator Drop Threshold
PWM Input Self Bias Voltage
DRVL Comparator Rise Threshold
VTH_DRVH
VPWM
VTH_DRVL
2.2
1.4 1.5
Input Current
High Side Driver
IPWM
PWM = 0 V, EN = GND
30
Output Resistance, Sourcing
Output Resistance, Sinking
Transition Time (Note 7)
Propagation Delay (Notes 5 & 6)
Low Side Driver
RH_TG
RL_TG
trDRVH
tfDRVH
tpdhDRVH
tpdlDRVH
VBST – VSW = 12 V
VBST – VSW = 12 V
CLOAD = 3 nF, VBST – VSW = 12 V
CLOAD = 3 nF, VBST – VSW = 12 V
Driving High, CLOAD = 3 nF
Driving Low, CLOAD = 3 nF
10
8.0
2.0
1.0
16
11
Output Resistance, Sourcing
Output Resistance, Sinking
Transition Time (Note 7)
Propagation Delay (Notes 5 & 6)
Negative Current Detector Threshold
Thermal Shutdown
RH_BG
RL_BG
trDRVL
tfDRVL
tpdhDRVL
tpdlDRVL
VNCDT
SW = GND
SW = VCC
CLOAD = 3 nF
CLOAD = 3 nF
Driving High, CLOAD = 3 nF
Driving Low, CLOAD = 3 nF
(Note 7)
2.0
1.0
16
11
10
8.0
−1.0
Thermal Shutdown
Tsd (Note 7)
150
Thermal Shutdown Hysteresis
Tsdhys
(Note 7)
5. Guaranteed by design; not tested in production .
6. For propagation delays, ”tpdh” refers to the specified signal going high ”tpdl” refers to it going low.
7. Design guaranteed.
170
20
Max Units
13.2 V
V
5.0 mA
1.0 mA
1.8 mA
1.8
mA
9.5 V
V
2.0 V
V
1.0 V
mV
mA
60 ns
60 ns
V
1.6 V
0.8 V
mA
3.5 W
2.5 W
25 ns
15
35 ns
30
3.5 W
2.5 W
25 ns
15
35 ns
30
mV
°C
°C
http://onsemi.com
5
Free Datasheet http://www.datasheet4u.com/
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet NCP5359.PDF ] | |
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