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PDF DB2S314 Data sheet ( Hoja de datos )
| Número de pieza | DB2S314 | |
| Descripción | Silicon epitaxial planar type | |
| Fabricantes | Panasonic | |
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DB2S314
Silicon epitaxial planar type
For high speed switching circuits
DB2J314 in SSMini2 type package
Features
Small reverse current IR
Short reverse recovery time trr
Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL: Level 1 compliant)
Marking Symbol: C6
Unit: mm
Packaging
DB2S31400L Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Reverse voltage
Maximum peak reverse voltage
Forward current
Peak forward current
Junction temperature
Operating ambient temperature
Storage temperature
VR
VRM
IF
IFM
Tj
Topr
Tstg
Rating
30
30
30
150
125
–40 to +85
–55 to +125
Unit
V
V
mA
mA
°C
°C
°C
1: Cathode
2: Anode
Panasonic
JEITA
Code
SSMini2-F5-B
SC-79
SOD-523
Electrical Characteristics Ta = 25°C±3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Forward voltage
VF1 IF = 1 mA
VF2 IF = 30 mA
0.4
V
1.0
Reverse current
IR VR = 30 V
300 nA
Terminal capacitance
Reverse recovery time *1
Ct VR = 10 V, f = 1 MHz
trr IF = IR = 10 mA, Irr = 1 mA, RL = 100 Ω
1.5
1.0
pF
ns
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage
of current from the operating equipment.
3. Absolute frequency of input and output is 2 GHz
*1: trr measurement circuit
Bias Application Unit (N-50BU)
Input Pulse
Output Pulse
A
Pulse Generator
(PG-10N)
Rs = 50 Ω
Wave Form Analyzer
(SAS-8130)
Ri = 50 Ω
tr tp
10%
t
VR 90%
tp = 2 µs
tr = 0.35 ns
δ = 0.05
IF
trr
t
IF = 10 mA
IR = 10 mA
RL = 100 Ω
Irr = 1 mA
Publication date: April 2013
Ver. EED
1
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| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet DB2S314.PDF ] | |
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