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PDF BZB84 Data sheet ( Hoja de datos )
| Número de pieza | BZB84 | |
| Descripción | Dual Zener diodes | |
| Fabricantes | NXP Semiconductors | |
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BZB84 series
Dual Zener diodes
Rev. 03 — 9 June 2009
Product data sheet
1. Product profile
1.1 General description
General-purpose Zener diodes in a SOT23 (TO-236AB) small Surface-Mounted
Device (SMD) plastic package.
1.2 Features
I Non-repetitive peak reverse power
dissipation: ≤ 40 W
I Total power dissipation: ≤ 300 mW
I Two tolerance series:
B = ±2 % and C = ±5 %
I Wide working voltage range:
nominal 2.4 V to 75 V (E24 range)
I Small plastic package suitable for
surface-mounted design
I Dual common anode configuration
I AEC-Q101 qualified
1.3 Applications
I General regulation functions
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Per diode
VF
PZSM
forward voltage
non-repetitive peak reverse
power dissipation
Conditions
IF = 10 mA
[1] Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
[2] tp = 100 µs; square wave; Tj = 25 °C prior to surge
Min Typ Max Unit
[1] - - 0.9 V
[2] - - 40 W
Free
Datash
1 page  
NXP Semiconductors
BZB84 series
Dual Zener diodes
Table 8. Characteristics per type; BZB84-B2V4 to BZB84-B24
Tj = 25 °C unless otherwise specified.
BZB84- Working voltage
Bxxx VZ (V)
Differential
resistance
rdif (Ω)
Reverse current Temperature
IR (µA)
coefficient
SZ (mV/K)
IZ = 5 mA
IZ = 1 mA IZ = 5 mA
IZ = 5 mA
Min
Max
Max
Max
Max VR (V) Min Max
2V4 2.35 2.45 600 100 50 1
−3.5 0
2V7 2.65 2.75 600 100 20 1
−3.5 0
3V0 2.94 3.06 600
95
10 1
−3.5 0
3V3 3.23 3.37 600
95
5 1 −3.5 0
3V6 3.53 3.67 600
90
5 1 −3.5 0
3V9 3.82 3.98 600
90
3 1 −3.5 0
4V3 4.21 4.39 600
90
3 1 −3.5 0
4V7 4.61 4.79 500
80
3 2 −3.5 0.2
5V1 5.00 5.20 480
60
2 2 −2.7 1.2
5V6 5.49 5.71 400
40
1 2 −2.0 2.5
6V2 6.08 6.32 150
10
3 4 0.4 3.7
6V8 6.66 6.94 80 15 2 4 1.2 4.5
7V5 7.35 7.65 80 15 1 5 2.5 5.3
8V2 8.04 8.36 80
15
0.70 5
3.2 6.2
9V1 8.92 9.28 100
15
0.50 6
3.8 7.0
10
9.80 10.20 150
20
0.20 7
4.5 8.0
11
10.80 11.20 150
20
0.10 8
5.4 9.0
12
11.80 12.20 150
25
0.10 8
6.0 10.0
13
12.70 13.30 170
30
0.10 8
7.0 11.0
15
14.70 15.30 200
30
0.05 10.5 9.2 13.0
16
15.70 16.30 200
40
0.05 11.2 10.4 14.0
18
17.60 18.40 225
45
0.05 12.6 12.4 16.0
20
19.6 20.4 225
55
0.05 14.0 14.4 18.0
22
21.6 22.4 250
55
0.05 15.4 16.4 20.0
24
23.5 24.5 250
70
0.05 16.8 18.4 22.0
Diode
capacitance
Cd (pF)[1]
Non-repetitive
peak reverse
current
IZSM (A)[2]
Max Max
450 6.0
450 6.0
450 6.0
450 6.0
450 6.0
450 6.0
450 6.0
300 6.0
300 6.0
300 6.0
200 6.0
200 6.0
150 4.0
150 4.0
150 3.0
90 3.0
85 2.5
85 2.5
80 2.5
75 2.0
75 1.5
70 1.5
60 1.5
60 1.25
55 1.25
[1] f = 1 MHz; VR = 0 V
[2] tp = 100 µs; square wave; Tj = 25 °C prior to surge
BZB84_SER_3
Product data sheet
Rev. 03 — 9 June 2009
© NXP B.V. 2009. All rights reserved.
5 of 14
Free Datasheet http://www.datasheet4u.com/
5 Page 
NXP Semiconductors
11. Soldering
3.3
2.9
1.9
BZB84 series
Dual Zener diodes
3 1.7
2
0.7 0.6
(3×) (3×)
0.5
(3×)
0.6
(3×)
1
Fig 8. Reflow soldering footprint SOT23 (TO-236AB)
2.2
1.2
(2×)
solder lands
solder resist
solder paste
occupied area
Dimensions in mm
sot023_fr
1.4
(2×)
4.6 2.6
1.4
solder lands
solder resist
occupied area
Dimensions in mm
preferred transport direction during soldering
2.8
4.5 sot023_fw
Fig 9. Wave soldering footprint SOT23 (TO-236AB)
BZB84_SER_3
Product data sheet
Rev. 03 — 9 June 2009
© NXP B.V. 2009. All rights reserved.
11 of 14
Free Datasheet http://www.datasheet4u.com/
11 Page | ||
| Páginas | Total 14 Páginas | |
| PDF Descargar | [ Datasheet BZB84.PDF ] | |
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