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PDF 21N50C3 Data sheet ( Hoja de datos )

Número de pieza 21N50C3
Descripción SPB21N50C3
Fabricantes Infineon 
Logotipo Infineon Logotipo



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No Preview Available ! 21N50C3 Hoja de datos, Descripción, Manual

Cool MOS™ Power Transistor
Feature
New revolutionary high voltage technology
Ultra low gate charge
Periodic avalanche rated
Extreme dv/dt rated
Ultra low effective capacitances
Improved transconductance
SPB21N50C3
VDS @ Tjmax
RDS(on)
ID
560
0.19
21
V
A
PG-TO263
Type
SPB21N50C3
Package
PG-TO263
Ordering Code
Q67040-S4566
Marking
21N50C3
Maximum Ratings
Parameter
Symbol
Continuous drain current
TC = 25 °C
TC = 100 °C
Pulsed drain current, tp limited by Tjmax
Avalanche energy, single pulse
ID=10A, VDD=50V
Avalanche energy, repetitive tAR limited by Tjmax2)
ID=21A, VDD=50V
Avalanche current, repetitive tAR limited by Tjmax
Gate source voltage
Gate source voltage AC (f >1Hz)
Power dissipation, TC = 25°C
Operating and storage temperature
Reverse diode dv/dt 7)
ID
ID puls
EAS
EAR
IAR
VGS
VGS
Ptot
Tj , Tstg
dv/dt
Value
SPB
21
13.1
63
690
1
21
±20
±30
208
-55...+150
15
Unit
A
A
mJ
A
V
W
°C
V/ns
Rev. 2.3
Page 1
2005-11-07
Free Datasheet http://www.datasheet4u.com/

1 page




21N50C3 pdf
SPB21N50C3
1 Power dissipation
Ptot = f (TC)
240 SPP21N50C3
W
200
180
160
140
120
100
80
60
40
20
00 20 40 60 80 100 120 °C 160
TC
3 Safe operating area
ID = f ( VDS )
parameter : D = 0 , TC=25°C
10 2
A
2 Power dissipation FullPAK
Ptot = f (TC)
35
W
25
20
15
10
5
00 20 40 60 80 100 120 °C 160
TC
4 Safe operating area FullPAK
ID = f (VDS)
parameter: D = 0, TC = 25°C
10 2
A
10 1
10 1
10 0
tp = 0.001 ms
tp = 0.01 ms
tp = 0.1 ms
10 -1
tp = 1 ms
tp = 10 ms
DC
10
-2
10
0
10 1
Rev. 2.3
10 0
tp = 0.001 ms
tp = 0.01 ms
10 -1
tp = 0.1 ms
tp = 1 ms
tp = 10 ms
DC
10 2 V 10 3
VDS
10
-2
10
0
Page 5
10 1
10 2 V 10 3
VDS
2005-11-07
Free Datasheet http://www.datasheet4u.com/

5 Page





21N50C3 arduino
PG-TO263-3-2, PG-TO263-3-5, PG-TO263-3-22
63%211&
Rev. 2.3
PDJH
511-07
Free Datasheet http://www.datasheet4u.com/

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