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PDF UT12N10 Data sheet ( Hoja de datos )
| Número de pieza | UT12N10 | |
| Descripción | N-CHANNEL POWER MOSFET | |
| Fabricantes | Unisonic Technologies | |
| Logotipo |  |
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UNISONIC TECHNOLOGIES CO., LTD
UT12N10
Preliminary
12 Amps, 100 Volts
N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC UT12N10 is an N-channel mode Power FET using
UTC’s advanced technology to provide custumers with minimum
on-state resistance by extremely high dense cell design. Moreover,
it‘ s good at handing high power and current.
FEATURES
* 100V, 12A, RDS(ON) = 180mΩ @VGS = 10V.
* Be good at handing high power and current.
* Very high dense cell design for super low RDS(ON).
* Lead free product is acquired.
SYMBOL
2.Drain
Power MOSFET
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
UT12N10L-TN3-R
UT12N10G-TN3-R
Note: Pin Assignment: G: Gate D: Drain
Package
TO-252
S: Source
Pin Assignment
1 23
G DS
Packing
Tape Reel
www.unisonic.com.tw
Copyright © 2011 Unisonic Technologies Co., Ltd
1 of 4
QW-R502-508.b
Free Datasheet http://www.datasheet4u.com/
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet UT12N10.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| UT12N10 | N-CHANNEL POWER MOSFET | Unisonic Technologies |
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