(PDF) KPA1758 Datasheet - MOS Field Effect Transistor

Número de pieza	KPA1758
Descripción	MOS Field Effect Transistor
Fabricantes	Kexin
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No Preview Available ! SMD Type MOS Field Effect Transistor KPA1758 Features Dual MOS FET chips in small package 2.5 V gate drive type low on-state resistance RDS(on)1 = 30 m (MAX.) (VGS = 4.5 V, ID = 3.0 A) RDS(on)2 = 40 m (MAX.) (VGS = 2.5 V, ID = 3.0 A) Low Ciss : Ciss = 1100 pF (TYP.) Built-in G-S protection diode Small and surface mount package ICIC 1 : Source 1 2 : Gate 1 7, 8 : Drain 1 3 : Source 2 4 : Gate 2 5, 6 : Drain 2 Absolute Maximum Ratings Ta = 25 Parameter Symbol Drain to Source Voltage (VGS = 0) VDSS Gate to Source Voltage (VDS = 0) VGSS Drain Current (DC) ID(DC) Drain Current (Pulse) 1 ID(pulse) Total Power Dissipation (1 unit) 2 PT Total Power Dissipation (2 unit) 2 PT Channel Temperature Tch Storage Temperature Tstg 1 PW 10 s, Duty cycle 1 % *2 Mounted on ceramic substrate of 2000 mm2 X1.1 mm Rating 30 12.0 6.0 24 1.7 2.0 150 -55 to + 150 Unit V V A A W W www.kexin.com.cn 1 Free Datasheet http://www.datasheet4u.com/ 1 page

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PDF KPA1758 Data sheet ( Hoja de datos )