(PDF) KPA1764 Datasheet - MOS Field Effect Transistor

Número de pieza	KPA1764
Descripción	MOS Field Effect Transistor
Fabricantes	Kexin
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No Preview Available ! SMD Type MOS Field Effect Transistor KPA1764 Features Dual chip type Low on-state resistance RDS(on)1 = 27 m TYP. (VGS = 10 V, ID = 3.5 A) RDS(on)2 = 32 m TYP. (VGS = 4.5 V, ID = 3.5 A) RDS(on)3 = 34 m TYP. (VGS = 4.0 V, ID = 3.5 A) Low input capacitance Ciss = 1300 pF TYP. Built-in G-S protection diode Small and surface mount package ICIC 1 : Source 1 2 : Gate 1 7, 8 : Drain 1 3 : Source 2 4 : Gate 2 5, 6 : Drain 2 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Drain to Source Voltage (VGS = 0) VDSS 60 Gate to Source Voltage (VDS = 0) VGSS 20 Drain Current (DC) ID(DC) 7 Drain Current (Pulse) 1 ID(pulse) 28 Total Power Dissipation (1 unit) 2 PT 1.7 Total Power Dissipation (2 unit) 2 PT 2.0 Channel Temperature Tch 150 Storage Temperature Tstg -55 to + 150 Single Avalanche Current 3 IAS 7 Single Avalanche Energy 3 EAS 98 1 PW 10 s, Duty cycle 1 % 2 Mounted on ceramic substrate of 2000 mm2 X1.1 mm 3 Starting Tch = 25 , VDD = 30 V, RG = 25 , VGS = 20 0 V Unit V V A A W W A mJ www.kexin.com.cn 1 Free Datasheet http://www.datasheet4u.com/ 1 page

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PDF KPA1764 Data sheet ( Hoja de datos )