(PDF) KPA1890 Datasheet - MOS Field Effect Transistor

Número de pieza	KPA1890
Descripción	MOS Field Effect Transistor
Fabricantes	Kexin
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No Preview Available ! SMD Type MOS Field Effect Transistor KPA1890 ICIC Features Can be driven by a 4.0-V power source Low on-state resistance N-channel RDS(on)1 = 27 m MAX. (VGS = 10 V, ID = 3.0 A) RDS(on)2 = 37 m MAX. (VGS = 4.5 V, ID = 3.0 A) RDS(on)3 = 47 m MAX. (VGS = 4.0 V, ID = 3 A) P-channel RDS(on)1 = 37 m MAX. (VGS = -10 V, ID = -2.5 A) RDS(on)2 = 56 m MAX. (VGS = -4.5 V, ID = -2.5 A) RDS(on)3 = 64 m MAX. (VGS = -4.0 V, ID = -2.5 A) Built-in G-S protection diode against ESD TSSOP-8 Unit: mm 1 :Drain1 2, 3 :Source1 4 :Gate1 5 :Gate2 6, 7 :Source2 8 :Drain2 Absolute Maximum Ratings Ta = 25 Parameter Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) Drain Current (pulse) 1 Total Power Dissipation 2 Channel Temperature Storage Temperature Symbol VDSS VGSS ID(DC) ID(pulse) PT Tch Tstg 1 PW 10 s, Duty Cycle 1% 2 Mounted on ceramic substrate of 5000 mm2 X 1.1 mm N-Channel P- Channel 30 -30 20 20 6.0 5.0 24 20 2 150 -55 to +150 Unit V V A A W www.kexin.com.cn 1 Free Datasheet http:/ 1 page

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PDF KPA1890 Data sheet ( Hoja de datos )