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PDF 3N150 Data sheet ( Hoja de datos )

Número de pieza 3N150
Descripción STP3N150
Fabricantes STMicroelectronics 
Logotipo STMicroelectronics Logotipo



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No Preview Available ! 3N150 Hoja de datos, Descripción, Manual

STFW3N150
STP3N150, STW3N150
N-channel 1500 V, 6 , 2.5 A, PowerMESH™ Power MOSFET
in TO-220, TO-247, TO-3PF
Features
Type
VDSS
STFW3N150
STP3N150
STW3N150
1500 V
1500 V
1500 V
RDS(on)
max.
<9
<9
<9
ID PTOT
2.5 A 63 W
2.5 A 140 W
2.5 A 140 W
100% avalanche tested
Intrinsic capacitances and Qg minimized
High speed switching
Fully isolated TO-3PF plastic package
Creepage distance path is 5.4 mm (typ.) for
TO-3PF
Application
Switching applications
Description
Using the well consolidated high voltage MESH
OVERLAYTM process, STMicroelectronics has
designed an advanced family of very high voltage
Power MOSFETs with outstanding performances.
The strengthened layout coupled with the
company’s proprietary edge termination structure,
gives the lowest RDS(on) per area, unrivalled gate
charge and switching characteristics.
3
2
1
TO-220
3
2
1
TO-247
3
2
1
TO-3PF
Figure 1. Internal schematic diagram
$
'
3
!-V
Table 1. Device summary
Order codes
STFW3N150
STP3N150
STW3N150
Marking
3N150
3N150
3N150
Package
TO-3PF
TO-220
TO-247
June 2010
Doc ID 13102 Rev 9
Packaging
Tube
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3N150 pdf
STFW3N150, STP3N150, STW3N150
Table 7.
Symbol
Switching times
Parameter
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off-delay time
Fall time
Electrical characteristics
Test conditions
VDD = 750 V, ID = 1.25 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 18)
Min. Typ. Max. Unit
24
47
-
45
61
ns
ns
-
ns
ns
Table 8.
Symbol
Source drain diode
Parameter
Test conditions
Min. Typ. Max. Unit
ISD
ISDM (1)
VSD (2)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
ISD = 2.5 A, VGS = 0
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 2.5 A, di/dt = 100 A/µs
VDD= 60 V
(see Figure 20)
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 2.5 A, di/dt = 100 A/µs
VDD= 60 V, Tj = 150 °C
(see Figure 20)
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
2.5 A
-
10 A
- 1.6 V
410
- 2.4
11.7
ns
µC
A
540
- 3.3
12.3
ns
µC
A
www.DataSheet.in
Doc ID 13102 Rev 9
5/15
Free Datasheet http://www.datasheet4u.com/

5 Page





3N150 arduino
STFW3N150, STP3N150, STW3N150
Package mechanical data
TO-220 mechanical data
mm inch
Dim
Min Typ Max Min Typ Max
A 4.40
4.60
0.173
0.181
b 0.61
0.88
0.024
0.034
b1 1.14
1.70
0.044
0.066
c 0.48
0.70
0.019
0.027
D 15.25
15.75
0.6
0.62
D1 1.27
0.050
E 10
10.40
0.393
0.409
e 2.40
2.70
0.094
0.106
e1 4.95
F 1.23
5.15
1.32
0.194
0.048
0.202
0.051
H1 6.20
6.60
0.244
0.256
J1 2.40
2.72
0.094
0.107
L 13
14 0.511
0.551
L1 3.50
3.93
0.137
0.154
L20 16.40
0.645
L30 28.90
1.137
P 3.75
3.85
0.147
0.151
Q 2.65
2.95
0.104
0.116
www.DataSheet.in
Doc ID 13102 Rev 9
11/15
Free Datasheet http://www.datasheet4u.com/

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