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PDF UPD168302 Data sheet ( Hoja de datos )
| Número de pieza | UPD168302 | |
| Descripción | MONOLITHIC 2CH H-BRIDGE DRIVER | |
| Fabricantes | NEC | |
| Logotipo |  |
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DATA SHEET
MOS INTEGRATED CIRCUIT
µ PD168302
MONOLITHIC 2CH H-BRIDGE DRIVER
DESCRIPTION
The µPD168302 is monolithic dual H-bridge driver LSI which uses power MOS FETs in the output stages. By using
the MOS process, this driver has substantially improved the voltage loss of the output stage and power consumption
as compared with conventional driver using bipolar transistors.
As the package, a 24-pin plastic TSSOP is adopted to enable the creation of compact, slim application sets.
It is provided with forward/reverse and brake functions and is ideal as a driver for DC motor and stepping motor.
FEATURES
• 2ch H-Bridge circuit employing power MOS FETs
• Charge-pump circuit for low-voltage operation
• Low output FET on resistance: 1.0 Ω TYP. 2.0 Ω MAX. (Sum of upper and lower side)
• Output current: DC current 0.6 A/ch
Peak current 1.0 A/ch
• Input logic frequency: 100 kHz
• 5 V logic power supply: Minimum operating supply voltage 4.0 V
• 0.9 to 3.6 V power supply for motor drive
• Under voltage locked out circuit: shutdown internal circuit at VDD = 1.7 V TYP.
• 24-pin plastic TSSOP (5.72 mm (225), 0.5 mm pitch)
ORDERING INFORMATION
Part Number
µ PD168302MA-6A5
Package
24-pin plastic TSSOP (5.72 mm (225))
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. S16402EJ1V0DS00 (1st edition)
Date Published May 2003 NS CP (K)
Printed in Japan
2003
Free Datasheet http://www.datasheet4u.com/
1 page  
µPD168302
5. FUNCTION TABLE
Input
IN1 IN2 /STB
L LH
HLH
LHH
HHH
xxL
Output
OUT1A
OUT1B
Hi-Z Hi-Z
HL
LH
LL
Hi-Z Hi-Z
Current direction
Stop
OUT1A→OUT1B
(Forward)
OUT1B→OUT1A
(Reverse)
Brake
(Regeneration mode)
All output stop mode
(Standby)
Input
IN3 IN4 /STB
Output
OUT2A
OUT2B
Current direction
L LH
HLH
LHH
HHH
xxL
Hi-Z
H
L
L
Hi-Z
Hi-Z Stop
OUT1A→OUT1B
L
(Forward)
OUT1B→OUT1A
H
(Reverse)
Brake
L
(Regeneration mode)
All output stop mode
Hi-Z
(Standby)
Remark H: High-level, L: Low-level, Hi-Z: High impedance
Data Sheet S16402EJ1V0DS
5
Free Datasheet http://www.datasheet4u.com/
5 Page 
µPD168302
NOTES FOR CMOS DEVICES
1 PRECAUTION AGAINST ESD FOR SEMICONDUCTORS
Note:
Strong electric field, when exposed to a MOS device, can cause destruction of the gate oxide and
ultimately degrade the device operation. Steps must be taken to stop generation of static electricity
as much as possible, and quickly dissipate it once, when it has occurred. Environmental control
must be adequate. When it is dry, humidifier should be used. It is recommended to avoid using
insulators that easily build static electricity. Semiconductor devices must be stored and transported
in an anti-static container, static shielding bag or conductive material. All test and measurement
tools including work bench and floor should be grounded. The operator should be grounded using
wrist strap. Semiconductor devices must not be touched with bare hands. Similar precautions need
to be taken for PW boards with semiconductor devices on it.
2 HANDLING OF UNUSED INPUT PINS FOR CMOS
Note:
No connection for CMOS device inputs can be cause of malfunction. If no connection is provided
to the input pins, it is possible that an internal input level may be generated due to noise, etc., hence
causing malfunction. CMOS devices behave differently than Bipolar or NMOS devices. Input levels
of CMOS devices must be fixed high or low by using a pull-up or pull-down circuitry. Each unused
pin should be connected to VDD or GND with a resistor, if it is considered to have a possibility of
being an output pin. All handling related to the unused pins must be judged device by device and
related specifications governing the devices.
3 STATUS BEFORE INITIALIZATION OF MOS DEVICES
Note:
Power-on does not necessarily define initial status of MOS device. Production process of MOS
does not define the initial operation status of the device. Immediately after the power source is
turned ON, the devices with reset function have not yet been initialized. Hence, power-on does
not guarantee out-pin levels, I/O settings or contents of registers. Device is not initialized until the
reset signal is received. Reset operation must be executed immediately after power-on for devices
having reset function.
Data Sheet S16402EJ1V0DS
11
Free Datasheet http://www.datasheet4u.com/
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet UPD168302.PDF ] | |
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