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PDF 2SA1163 Data sheet ( Hoja de datos )
| Número de pieza | 2SA1163 | |
| Descripción | Silicon PNP Epitaxial Type Transistor | |
| Fabricantes | Kexin | |
| Logotipo |  |
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SMD Type
Silicon PNP Epitaxial Type
2SA1163
Transistors
Features
High voltage.
Small package.
High hFE.
Low noise.
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
12
0.95+0.1
-0.1
1.9+0.1
-0.1
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
Rating
-120
-120
-5
-100
-20
150
125
-55 to +125
Unit
V
V
V
mA
mA
mW
Unit: mm
0.1+0.05
-0.01
1.Base
2.Emitter
3.collector
Electrical Characteristics Ta = 25
Parameter
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Noise figure
Symbol
Testconditons
ICBO VCB = -120 V, IE = 0
IEBO VEB = -5 V, IC = 0
hFE VCE = -6 V, IC = -2 mA
VCE (sat) IC = -10 mA, IB = -1 mA
fT VCE = -6 V, IC = -1 mA
Cob VCB = -10 V, IE = 0, f = 1 MHz
NF VCB=-6 V, IC=-0.1 mA, f=1 kHz,Rg=10 kÙ
Min Typ Max Unit
-0.1 ìA
-0.1 ìA
200 700
-0.3 V
100 MHz
4 pF
1.0 10 dB
hFE Classification
Marking
Rank
hFE
CG
GR
200 400
CL
BL
350 700
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| PDF Descargar | [ Datasheet 2SA1163.PDF ] | |
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