|
|
PDF 2SB1504 Data sheet ( Hoja de datos )
| Número de pieza | 2SB1504 | |
| Descripción | Silicon PNP epitaxial planar type darlington | |
| Fabricantes | Panasonic | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de 2SB1504 (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
|
No Preview Available !
Power Transistors
2SB1504
Silicon PNP epitaxial planar type darlington
For power switching
7.5±0.2
Unit: mm
4.5±0.2
• High forward current transfer ratio hFE
• High-speed switching
• Allowing automatic insertion with radial taping
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
−50
−50
−7
−8
−12
1.5
150
−55 to +150
Unit
V
V
V
A
A
W
°C
°C
0.65±0.1
0.7±0.1
1.15±0.2
0.85±0.1
1.0±0.1 0.8 C
0.7±0.1
1.15±0.2
0.8 C
0.5±0.1
0.4±0.1
0.8 C 1 2 3
2.5±0.2
2.5±0.2
1: Emitter
2: Collector
3: Base
MT-3-A1 Package
Internal Connection
B
C
■ Electrical Characteristics Ta = 25°C ± 3°C
E
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
VCEO
ICBO
IEBO
hFE1 *
hFE2
VCE(sat)
VBE(sat)
fT
ton
tstg
tf
IC = −30 mA, IB = 0
VCB = −50 V, IE = 0
VEB = −7 V, IC = 0
VCE = −3 V, IC = −4 A
VCE = −3 V, IC = −8 A
IC = −4 A, IB = −8 mA
IC = −4 A, IB = −8 mA
VCB = −10 V, IE = 0.5 A, f = 200 MHz
IC = −4 A, IB1 = −8 mA, IB2 = 8 mA
VCC = −50 V
−50
1 000
500
−100
−2
10 000
V
µA
mA
−1.5 V
−2.0 V
20 MHz
0.5 µs
2.0 µs
1.0 µs
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
P
Q
R
hFE1 1 000 to 2 500 2 000 to 5 000 4 000 to 10 000
Publication date: April 2003
SJD00080BED
1
Free Datasheet http://www.datasheet4u.com/
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet 2SB1504.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| 2SB1502 | Silicon PNP epitaxial planar type Darlington |  Panasonic Semiconductor |
| 2SB1502 | Silicon PNP Darlington Power Transistor |  New Jersey Semi-Conductor |
| 2SB1502 | Trans Darlington PNP 100V 5A |  New Jersey Semiconductor |
| 2SB1503 | Silicon PNP epitaxial planar type Darlington(For power amplification) | Panasonic Semiconductor |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |