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PDF 2SA2140 Data sheet ( Hoja de datos )
| Número de pieza | 2SA2140 | |
| Descripción | Silicon PNP Power Transistor | |
| Fabricantes | New Jersey Semi-Conductor | |
| Logotipo |  |
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'J
C/
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
,Unc.
Silicon PNP Power Transistor
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
2SA2140
DESCRIPTION
• Collector-Emitter Breakdown Voltage-
:V(BR)CEo=-180V(Min)
• Good Linearity of hFE
APPLICATIONS
• Designed for power amplification and for TV VM circuit.
ABSOLUTE MAXIMUM RATINGS(Ta=25°C)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
-180 V
VCEO Collector-Emitter Voltage
-180 V
1
ppf
i
i
123
2
<
PIN 1.BASE
2. COLLECTOR
3. EMITTER
TO-220F package
.• • B
Q
t. •-*
F O '"""' O
,c -
» -a- H
* :*
U
! O ,": O
i V__.'
-.» A
', I _ •
L 4 -•• i : H
I ' ''•' I ' 1
-R'-
K
VEBO Emitter-Base Voltage
Ic Collector Current-Continuous
ICP Collector Current-Peak
Collector Power Dissipation
@Ta=25"C
PC
Collector Power Dissipation
@TC=25BC
Tj Junction Temperature
Tstg Storage Temperature
-6 V
-1.5 A
-3 A
2
W
20
150 r
-55-150 •c
--o
- N-
J --
mm
DIM MIN
A 14.95
B 10.00
C 4,40
D 0.75
F 3.10
H 3.70
J 0.50
K 13.4
L 1.10
N 5.00
q 2.70
R 2.20
S 2.65
U 6.40
MAX
15.05
10.10
4.60
0.80
3.30
3.90
0.70
13.6
1.30
5.20
2.90
2.40
2.85
6.60
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to he both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in itsuse.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
Free Datasheet http://www.datasheet4u.com/
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| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 2SA2140.PDF ] | |
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