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Número de pieza | 2SA1201 | |
Descripción | PNP Silicon Epitaxial Planar Transistor | |
Fabricantes | SeCoS | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de 2SA1201 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
No Preview Available ! Elektronische Bauelemente
RoHS Compliant Product
2SA1201
PNP Silicon
Epitaxial Planar Transistor
SOT-89
FEATURES
z High voltage
z High transition frequency
z Complementary to 2SC2881
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol
Parameter
Value
Units
VCBO
Collector-Base Voltage
-120
V
VCEO
Collector-Emitter Voltage
-120
V
VEBO
Emitter-Base Voltage
-5 V
IC
Collector Current -Continuous
-0.8 A
PC Collector Power Dissipation
0.5 W
TJ Junction Temperature
Tstg Storage Temperature
150
-55-150
℃
℃
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
4.4 4.6
4.05 4.25
1.50 1.70
1.30 1.50
2.40 2.60
0.89 1.20
REF.
G
H
I
J
K
L
M
Millimeter
Min. Max.
3.00 REF.
1.50 REF.
0.40 0.52
1.40 1.60
0.35 0.41
5 TYP.
0.70 REF.
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol Test conditions
Collector-base breakdown voltage
V(BR)CBO IC=-1mA,IE=0
Collector-emitter breakdown voltage
V(BR)CEO IC=-10mA,IB=0
Emitter-base breakdown voltage
V(BR)EBO IE=-1mA,IC=0
Collector cut-off current
ICBO VCB=-120V,IE=0
Emitter cut-off current
IEBO VEB=-5V,IC=0
DC current gain
hFE VCE=-5V,IC=-100mA
Collector-emitter saturation voltage
VCE(sat) IC=-500mA,IB=-50mA
Base-emitter voltage
VBE VCE=-5V,IC=-500mA
Transition frequency
fT VCE=-5V,IC=-100mA
Collector output capacitance
Cob VCB=-10V,IE=0,f=1MHz
MIN
-120
-120
-5
80
TYP
120
MAX UNIT
V
V
V
-0.1 μA
-0.1 μA
240
-1 V
-1 V
MHz
30 pF
CLASSIFICATION OF hFE
Rank
Range
Marking
O
80-160
DO
Y
120-240
DY
http://www.SeCoSGmbH.com
08-May-2007 Rev. A
Any changing of specification will not be informed individual
Page 1 of 2
Free Datasheet http://www.datasheet4u.com/
1 page |
Páginas | Total 2 Páginas | |
PDF Descargar | [ Datasheet 2SA1201.PDF ] |
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