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PDF 2SA1201 Data sheet ( Hoja de datos )
| Número de pieza | 2SA1201 | |
| Descripción | TRANSISTOR | |
| Fabricantes | Jin Yu Semiconductor | |
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2SA1 201
TRANSISTOR(PNP)
SOT-89
FEATURES
z High voltage
z High transition frequency
z Complementary to 2SC2881
1. BASE
2. COLLECTOR
3. EMITTER
1
2
3
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol
Parameter
Value
Units
VCBO
Collector-Base Voltage
-120
V
VCEO
Collector-Emitter Voltage
-120
V
VEBO
Emitter-Base Voltage
-5 V
IC
Collector Current -Continuous
-0.8 A
PC Collector Power Dissipation
0.5 W
TJ Junction Temperature
Tstg Storage Temperature
150
-55-150
℃
℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol Test conditions
MIN TYP
Collector-base breakdown voltage
V(BR)CBO IC=-1mA,IE=0
-120
Collector-emitter breakdown voltage
V(BR)CEO IC=-10mA,IB=0
-120
Emitter-base breakdown voltage
V(BR)EBO IE=-1mA,IC=0
-5
Collector cut-off current
ICBO VCB=-120V,IE=0
Emitter cut-off current
IEBO VEB=-5V,IC=0
DC current gain
hFE VCE=-5V,IC=-100mA
80
Collector-emitter saturation voltage
VCE(sat) IC=-500mA,IB=-50mA
Base-emitter voltage
VBE VCE=-5V,IC=-500mA
Transition frequency
fT VCE=-5V,IC=-100mA
120
Collector output capacitance
Cob VCB=-10V,IE=0,f=1MHz
MAX UNIT
V
V
V
-0.1 μA
-0.1 μA
240
-1 V
-1 V
MHz
30 pF
CLASSIFICATION OF hFE
Rank
Range
Marking
O
80-160
DO
Y
120-240
DY
JinYu
semiconductor
www.htsemi.com
Free Datasheet http://www.datasheet4u.com/
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