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PDF 2SA1162 Data sheet ( Hoja de datos )
| Número de pieza | 2SA1162 | |
| Descripción | Silicon PNP Epitaxial Type Transistor | |
| Fabricantes | Kexin | |
| Logotipo |  |
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SMD Type
Transistors
Silicon PNP Epitaxial Type Transistor
2SA1162
Features
High voltage and high current: VCEO = -50 V, IC = ?150 mA (max)
Low noise: NF = 1dB (typ.), 10dB (max)
Small package
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
12
0.95+0.1
-0.1
1.9+0.1
-0.1
Unit: mm
0.1+0.05
-0.01
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Electrical Characteristics Ta = 25
Parameter
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Collector output capacitance
Noise figure
Transition frequency
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
Rating
-50
-50
-5
-150
-30
150
125
-55 to +125
Unit
V
V
V
mA
mA
mW
Symbol
Testconditons
ICBO VCB = -50 V, IE = 0
IEBO VEB = -5 V, IC = 0
hFE VCE = -6 V, IC = -2 mA
VCE (sat) IC = -100 mA, IB = -10 mA
Cob VCB = -10 V, IE = 0, f = 1 MHz
VCE = -6 V, IC = -0.1 mA, f = 1 kHz,
NF
Rg = 10 k
fT VCE = -10 V, IC = -1 mA
1.Base
2.Emitter
3.collector
Min Typ Max Unit
-0.1 A
-0.1 A
70 400
-0.1 -0.3 V
4 7 pF
1.0 10 dB
80 MHz
hFE Classification
Marking
Rank
hFE
SO
O
70 140
SY
Y
120 240
SR
GR
200 400
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| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 2SA1162.PDF ] | |
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