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PDF FDMF6708N Data sheet ( Hoja de datos )
| Número de pieza | FDMF6708N | |
| Descripción | High-Frequency DrMOS Module | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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April 2013
FDMF6708N — Extra-Small, High-Performance,
High-Frequency DrMOS Module
Benefits
Ultra-Compact 6x6 mm PQFN, 72% Space-Saving
Compared to Conventional Discrete Solutions
Fully Optimized System Efficiency
Clean Switching Waveforms with Minimal Ringing
High-Current Handling
Features
Over 93% Peak-Efficiency
High-Current Handling: 50 A
High-Performance PQFN Copper-Clip Package
3-State 5 V PWM Input Driver
Automatic Diode Emulation (Skip Mode) enabled
through ZCD_EN# Input
Thermal Warning Flag for Over-Temperature
Condition
Driver Output Disable Function (DISB# Pin)
Internal Pull-Up and Pull-Down for ZCD_EN# and
DISB# Inputs, Respectively
Fairchild PowerTrench® Technology MOSFETs for
Clean Voltage Waveforms and Reduced Ringing
Fairchild SyncFET™ (Integrated Schottky Diode)
Technology in Low-Side MOSFET
Integrated Bootstrap Schottky Diode
Adaptive Gate Drive Timing for Shoot-Through
Protection
Under-Voltage Lockout (UVLO)
Optimized for Switching Frequencies up to 1MHz
Low-Profile SMD Package
Fairchild Green Packaging and RoHS Compliance
Based on the Intel® 4.0 DrMOS Standard
Description
The XS™ DrMOS family is Fairchild’s next-generation,
fully optimized, ultra-compact, integrated MOSFET plus
driver power stage solution for high-current, high-
frequency, synchronous buck DC-DC applications. The
FDMF6708N integrates a driver IC, two power
MOSFETs, and a bootstrap Schottky diode into a
thermally enhanced, ultra-compact 6x6 mm package.
With an integrated approach, the complete switching
power stage is optimized with regard to driver and
MOSFET dynamic performance, system inductance,
and power MOSFET RDS(ON). XS™ DrMOS uses
Fairchild's high-performance PowerTrench® MOSFET
technology, which dramatically reduces switch ringing,
eliminating the need for snubber circuit in most buck
converter applications.
A driver IC with reduced dead times and propagation
delays further enhances the performance. A thermal
warning function warns of a potential over-temperature
situation. The FDMF6708N also incorporates a Zero-
Cross Detect (ZCD_EN#) for improved light-load
efficiency. The FDMF6708N also provides a 3-state 5 V
PWM input for compatibility with a wide range of PWM
controllers.
Applications
Notebook Computers
High-Performance Gaming Motherboards
Compact Blade Servers & Workstations, V-Core
and Non-V-Core DC-DC Converters
Desktop Computers, V-Core and Non-V-Core
DC-DC Converters
High-Current DC-DC Point-of-Load Converters
Networking and Telecom Microprocessor Voltage
Regulators
Small Form-Factor Voltage Regulator Modules
Ordering Information
Part Number Current Rating
Package
Top Mark
FDMF6708N
50 A
40-Lead, Clipbond PQFN DrMOS, 6.0 mm x 6.0 mm Package FDMF6708N
© 2011 Fairchild Semiconductor Corporation
FDMF6708N • Rev. 1.0.3
www.fairchildsemi.com
1 page  
Electrical Characteristics
Typical values are VIN = 12 V, VCIN = 5 V, VDRV = 5 V, and TA = TJ = +25°C unless otherwise noted.
Symbol
Parameter
Condition
Min. Typ. Max. Unit
Basic Operation
IQ
VUVLO
VUVLO_Hys
Quiescent Current
UVLO Threshold
UVLO Hysteresis
PWM Input (VCIN = VDRV = 5 V ±10%)
RUP_PWM Pull-Up Impedance
RDN_PWM Pull-Down Impedance
VIH_PWM PWM High Level Voltage
VTRI_HI 3-State Upper Threshold
VTRI_LO 3-State Lower Threshold
VIL_PWM PWM Low Level Voltage
tD_HOLD-OFF 3-State Shut-Off Time
VHiZ_PWM 3-State Open Voltage
tPWM-OFF_MIN PWM Minimum Off Time
PWM Input (VCIN = VDRV = 5 V ±5%)
RUP_PWM Pull-Up Impedance
RDN_PWM Pull-Down Impedance
VIH_PWM PWM High Level Voltage
VTRI_HI 3-State Upper Threshold
VTRI_LO 3-State Lower Threshold
VIL_PWM PWM Low Level Voltage
tD_HOLD-OFF 3-State Shut-Off Time
VHiZ_PWM 3-State Open Voltage
tPWM-OFF_MIN PWM Minimum Off Time
DISB# Input
VIH_DISB High-Level Input Voltage
VIL_DISB
IPLD
Low-Level Input Voltage
Pull-Down Current
tPD_DISBL Propagation Delay
tPD_DISBH Propagation Delay
IQ=IVCIN+IVDRV, PWM=LOW or HIGH or Float
VCIN Rising
2
3.3
0.35
mA
V
V
VPWM=5 V
VPWM=0 V
20
20
3.15 3.80 4.45
3.10 3.75 4.40
1.05 1.40 1.90
0.70 1.00 1.30
150
2.20 2.50 2.80
70
kΩ
kΩ
V
V
V
V
ns
V
ns
VPWM=5 V
VPWM=0 V
20
20
3.35 3.80 4.25
3.30 3.75 4.20
1.10 1.40 1.75
0.74 1.00 1.26
150
2.30 2.50 2.70
70
kΩ
kΩ
V
V
V
V
ns
V
ns
PWM=GND, Delay Between DISB# from
HIGH to LOW to GL from HIGH to LOW
PWM=GND, Delay Between DISB# from
LOW to HIGH to GL from LOW to HIGH
2V
0.8 V
10 µA
220 ns
520 ns
ZCD_EN# Input
VIH_ZCD_EN High-Level Input Voltage
VIL_ZCD_EN Low-Level Input Voltage
IPLU Pull-Up Current
tPD_ZLGLL Propagation Delay
tPD_ZHGLH Propagation Delay
PWM=GND, Delay Between ZCD_EN#
from HIGH to LOW to GL from HIGH to
LOW
PWM=GND, Delay Between ZCD_EN#
from LOW to HIGH to GL from LOW to
HIGH
2V
0.8 V
10 µA
1800
ns
20 ns
Continued on the following page…
© 2011 Fairchild Semiconductor Corporation
FDMF6708N • Rev. 1.0.3
5
www.fairchildsemi.com
5 Page 
Typical Performance Characteristics
Test Conditions: VCIN=5 V, VDRV=5 V, TA=25°C, and natural convection cooling, unless otherwise specified.
2.0
TA = 25°C
1.8
1.6
1.4
VIH_DISB#
VIL_DISB#
1.8
VCIN = 5V
1.7
1.6
1.5
1.4
VIH_DISB#
1.2 1.3 VIL_DISB#
1.0
4.50
4.75 5.00 5.25
Driver Supply Voltage, VCIN (V)
5.50
1.2
-55
0 25 55 100 125
Driver IC Junction Temperature, TJ (oC)
150
Figure 24. DISB# Threshold vs. Driver Supply
Voltage
14
VCIN = 5V
13
12
11
10
9
8
7
-55
0 25 55 100 125
Driver IC Junction Temperature, TJ (oC)
150
Figure 26. DISB# Pull-Down Current vs.
Temperature
Figure 25. DISB# Threshold vs. Temperature
700
IF = 1mA
650
600
550
500
450
400
350
300
-55
0 25 55 100 125
Driver IC Junction Temperature, TJ (oC)
150
Figure 27. Boot Diode Forward Voltage vs.
Temperature
© 2011 Fairchild Semiconductor Corporation
FDMF6708N • Rev. 1.0.3
11
www.fairchildsemi.com
11 Page | ||
| Páginas | Total 19 Páginas | |
| PDF Descargar | [ Datasheet FDMF6708N.PDF ] | |
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