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Número de pieza | 2N4854 | |
Descripción | NPN/PNP Silicon Complementary Small Signal Dual Transistor | |
Fabricantes | Microsemi Corporation | |
Logotipo | ||
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No Preview Available ! 2N4854
Available on
commercial
versions
NPN/PNP Silicon Complementary
Small Signal Dual Transistor
Qualified per MIL-PRF-19500/421
DESCRIPTION
This 2N4854 device in a 6-pin TO-78 package is military qualified up to a JANTXV level for
high-reliability applications. Microsemi also offers numerous other products to meet higher and
lower power voltage regulation applications.
Qualified Levels:
JAN, JANTX, and
JANTXV
Important: For the latest information, visit our website http://www.microsemi.com.
FEATURES
• JEDEC registered 2N4854.
• JAN, JANTX, and JANTXV qualifications also available per MIL-PRF-19500/421.
• RoHS compliant versions available (commercial grade only).
• Compact package design.
• Lightweight.
APPLICATIONS / BENEFITS
TO-78 Package
Also available in:
6-Pin U package
2N4854U
6-Pin Flatpack
package
2N3838
MAXIMUM RATINGS
Parameters/Test Conditions
Thermal Resistance Junction-to-Case
Thermal Resistance Junction-to-Ambient
Total Power Dissipation @ TA = +25 ºC (1)
Total Power Dissipation @ TC = +25 ºC (2)
Junction and Storage Temperature
Collector-Base Voltage, Emitter Open
Emitter-Base Voltage, Collector Open
Collector-Emitter Voltage, Base Open
Collector Current, dc
Lead to Case Voltage
Solder Temperature @ 10 s
Symbol
R ӨJC
R ӨJA
PT
PT
TJ and
T STG
V CBO
V EBO
V CEO
IC
T SP
Value per
Each
Transistor
Total
Package
175 87
350 290
0.30 0.60
1.0 2.0
-65 to +200
Unit
ºC/W
ºC/W
W
W
ºC
60
5
40
600
+/- 120
260
V
V
V
mA
V
oC
Notes: 1. For TA > +25°C, derate linearly 1.71 mW/°C one transistor, 3.43 mW/°C both transistors.
2. For TC > +25°C, derate linearly 5.71 mW/°C one transistor, 11.43 mW/°C both transistors.
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
T4-LDS-0275, Rev. 1 (121178)
©2012 Microsemi Corporation
Page 1 of 5
1 page PACKAGE DIMENSIONS
2N4854
Dimensions
Ltr Inch
Millimeters
Notes
Min Max
Min
Max
CD .305 .335
7.75
8.51
CH .140 .260
3.56
6.60
HD .335 .370
8.51
9.40
HT .009 .125
0.23
3.18
LD .016 .021
0.41
0.53 3,7
LL .500 1.750 12.70 44.45
7
Dimensions
Ltr Inch
Millimeters
Min Max Min
Max
LS1 .0707 Nom.
1.796 Nom.
LS2 .1000 Nom.
2.540 Nom
LU .016 .019 0.41
0.48
TL .029 .045 0.74
1.14
TW .028 .034 0.71
0.86
Notes
5
5
4, 7
6
NOTES:
1. Dimensions are in inches.
2. Millimeters are given for general information only.
3. Measured in the zone beyond .250 inch (6.35 mm) from the seating plane.
4. Measured in the zone .050 inch (1.27 mm) and .250 inch (6.35 mm) from the seating plane.
5. When measured in a gauging plane .054 +.001, -.000 inch (1.37 +0.03, -0.00 mm) below the seating plane of the
transistor, maximum diameter leads shall be within .007 inch (0.18 mm) of their true location relative to a maximum
width tab. Smaller diameter leads shall fall within the outline of the maximum diameter lead tolerance.
6. Measured from the maximum diameter of the actual device.
7. All six leads.
8. In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology.
T4-LDS-0275, Rev. 1 (121178)
©2012 Microsemi Corporation
Page 5 of 5
5 Page |
Páginas | Total 5 Páginas | |
PDF Descargar | [ Datasheet 2N4854.PDF ] |
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