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PDF 2N4403 Data sheet ( Hoja de datos )

Número de pieza 2N4403
Descripción General Purpose Transistors(PNP Silicon)
Fabricantes ON Semiconductor 
Logotipo ON Semiconductor Logotipo

2N4403 datasheet


1. Datasheet - PNP Transistor, Fairchild






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2N4403
Preferred Device
General Purpose
Transistors
PNP Silicon
Features
Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Collector − Emitter Voltage
Collector − Base Voltage
Emitter − Base Voltage
Collector Current − Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
VCEO
VCBO
VEBO
IC
PD
40 Vdc
40 Vdc
5.0 Vdc
600 mAdc
625 mW
5.0 mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD 1.5 W
12 mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg −55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Ambient RqJA
200 °C/W
Thermal Resistance, Junction−to−Case
RqJC
83.3 °C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
COLLECTOR
3
2
BASE
1
EMITTER
TO−92
CASE 29
STYLE 1
123
STRAIGHT LEAD
BULK PACK
1
2
3
BENT LEAD
TAPE & REEL
AMMO PACK
MARKING DIAGRAM
2N
4403
AYWW G
G
2N4403 = Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques Reference
Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2007
March, 2007 − Rev. 3
1
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Preferred devices are recommended choices for future
use and best overall value.
Publication Order Number:
2N4403/D

1 page




2N4403 pdf
2N4403
h PARAMETERS
VCE = −10 Vdc, f = 1.0 kHz, TA = 25°C
This group of graphs illustrates the relationship between
hfe and other “h” parameters for this series of transistors. To
obtain these curves, a high−gain and a low−gain unit were
selected from the 2N4403 lines, and the same units were
used to develop the correspondingly−numbered curves on
each graph.
1000
700
500
300
200
100
70
50
30
0.1
2N4403 UNIT 1
2N4403 UNIT 2
0.2 0.3 0.5 0.7 1.0
2.0 3.0
IC, COLLECTOR CURRENT (mAdc)
Figure 10. Current Gain
5.0 7.0 10
100 k
50 k
20 k
10 k
5k
2k
1k
500
200
100
0.1
2N4403 UNIT 1
2N4403 UNIT 2
0.2 0.3 0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
IC, COLLECTOR CURRENT (mAdc)
Figure 11. Input Impedance
20
10 2N4403 UNIT 1
5.0 2N4403 UNIT 2
2.0
1.0
0.5
0.2
0.1
0.1
0.2 0.3 0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
IC, COLLECTOR CURRENT (mAdc)
Figure 12. Voltage Feedback Ratio
500
100
50
20
10
5.0
2.0
1.0
0.1
2N4403 UNIT 1
2N4403 UNIT 2
10
0.2 0.3 0.5 0.7 1.0
2.0 3.0
IC, COLLECTOR CURRENT (mAdc)
5.0 7.0
Figure 13. Output Admittance
http://onsemi.com
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