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PDF 2N4399 Data sheet ( Hoja de datos )
| Número de pieza | 2N4399 | |
| Descripción | PNP HIGH POWER SILICON TRANSISTOR | |
| Fabricantes | Microsemi Corporation | |
| Logotipo |  |
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TECHNICAL DATA
PNP HIGH POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/433
Devices
2N4399
2N5745
Qualified Level
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Base Current
Collector Current
Total Power Dissipation
@ TA =+ 250C (1)
@ TC = +1000C (2)
Operating & Storage Junction Temperature Range
THERMAL CHARACTERISTICS
Characteristics
Symbol
VCEO
VCBO
VEBO
IB
IC
PT
TJ, Tstg
Symbol
Thermal Resistance, Junction-to-Case
Junction-to-Ambient
1) Derate linearly @ 28.57 mW/0C for TA > +250C
2) Derate linearly @ 1.15 W/0C for TC > +1000C
RθJC
RθJA
2N4399 2N5745
60 80
60 80
5.0
7.5
30 20
5.0
115
-55 to +200
Max.
3
0.875
35
ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)
Characteristics
Symbol
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 200 mAdc
2N4399
2N5745
V(BR)CEO
Collector-Emitter Cutoff Current
VCE = 60 Vdc
VCE = 80 Vdc
Collector-Emitter Cutoff Current
2N4399
2N5745
ICEO
VCE = 60 Vdc, VBE = 1.5 Vdc
VCE = 80 Vdc, VBE = 1.5 Vdc
Emitter-Base Cutoff Current
VEB = 5.0 Vdc
2N4399
2N5745
ICEX
IEBO
Unit
Vdc
Vdc
Vdc
Adc
Adc
W
W
0C
Unit
0C/W
TO-3*
(TO-204AA)
*See appendix A for
package outline
Min. Max.
Unit
60 Vdc
80
100 µAdc
100
5.0 µAdc
5.0
5.0 µAdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 1 of 2
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| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 2N4399.PDF ] | |
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