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Número de pieza | B1626 | |
Descripción | PNP Transistor - 2SB1626 | |
Fabricantes | Sanken | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de B1626 (archivo pdf) en la parte inferior de esta página. Total 1 Páginas | ||
No Preview Available ! Darlington
2SB1626
(70Ω) E
B
Equivalent circuit C
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2495) Application : Audio, Series Regulator and General Purpose
sAbsolute maximum ratings (Ta=25°C) sElectrical Characteristics
(Ta=25°C)
Symbol
2SB1626
Unit
Symbol
Conditions
2SB1626 Unit
VCBO
–110
V ICBO
VCB=–110V
–100max
µA
VCEO
–110
V IEBO
VEB=–5V
–100max
µA
VEBO
–5
V V(BR)CEO
IC=–30mA
–110min
V
IC
–6
A hFE
VCE=–4V, IC=–5A
5000min∗
IB
–1
A
VCE(sat)
IC=–5A, IB=–5mA
–2.5max
V
PC
30(Tc=25°C)
W
VBE(sat)
IC=–5A, IB=–5mA
–3.0max
V
Tj
150 °C fT
VCE=–12V, IE=0.5A
100typ
MHz
Tstg
–55 to +150
°C
COB
VCB=–10V, f=1MHz
110typ
pF
∗hFE Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000)
sTypical Switching Characteristics (Common Emitter)
VCC
RL
(V) (Ω)
IC
VBB1
VBB2
IB1
IB2
ton tstg
tf
(A)
(V)
(V)
(mA)
(mA)
(µs)
(µs) (µs)
–30 6
–5 –10
5
–5
5 1.1typ 3.2typ 1.1typ
External Dimensions FM20(TO220F)
10.1±0.2
4.2±0.2
2.8 c0.5
ø3.3±0.2
a
b
1.35±0.15
1.35±0.15
2.54
0.85
+0.2
-0.1
2.54
0.45
+0.2
-0.1
2.4±0.2
2.2±0.2
Weight : Approx 2.0g
BCE
a. Type No.
b. Lot No.
I C– V CE Characteristics (Typical)
–6
––00..54mmAA
–0.3mA
–0.2mA
–4
IB=–0.1mA
–2
V CE( s a t ) – I B Characteristics (Typical)
–3
I C– V BE Temperature Characteristics (Typical)
(VCE=–4V)
–6
–2
–5A
–4
IC=–3A
–1 –2
0
0 –2 –4 –6
Collector-Emitter Voltage VCE(V)
0
–0.1
–0.5 –1
–5 –10
Base Current IB(mA)
–50 –100
0
0 –1 –2 –3
Base-Emittor Voltage VBE(V)
h FE– I C Characteristics (Typical)
40,000
(VCE=–4V)
10,000
5,000
Typ
h FE– I C Temperature Characteristics (Typical)
50000
10000
5000
(VCE=–4V)
125˚C
25˚C
–30˚C
θ j-a– t Characteristics
5.0
1000
1,000
500
500
1.0
0.5
200
–0.2
–0.05 –0.1
–0.5 –1
Collector Current IC(A)
–5 –6
100
–0.02 –0.05 –0.1
–0.5 –1
Collector Current IC(A)
0.3
–5 –6
1
10 100
Time t(ms)
1000
f T– I E Characteristics (Typical)
(VCE=–12V)
120
100 Typ
80
60
40
20
0
0.02
0.05 0.1
0.5 1
Emitter Current IE(A)
56
Safe Operating Area (Single Pulse)
–20
–10
–5
DC
1
00
m
1
s
0
m
s
–1
–0.5
–0.1
Without Heatsink
Natural Cooling
–0.05
–3
–5 –10
–50 –100 –200
Collector-Emitter Voltage VCE(V)
Pc–Ta Derating
30
20
10
Without Heatsink
2
0
0 25 50 75 100 125
Ambient Temperature Ta(˚C)
150
53
Free Datasheet http://www.datasheet4u.com/
1 page |
Páginas | Total 1 Páginas | |
PDF Descargar | [ Datasheet B1626.PDF ] |
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