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PDF 2N4351 Data sheet ( Hoja de datos )
| Número de pieza | 2N4351 | |
| Descripción | N-CHANNEL MOSFET ENHANCEMENT MODE | |
| Fabricantes | Linear Integrated Systems | |
| Logotipo |  |
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 1. N-Ch, MOSFET ( PDF )  Hay una vista previa y un enlace de descarga de 2N4351 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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Linear Integrated Systems
2N4351
N-CHANNEL MOSFET
ENHANCEMENT MODE
FEATURES
DIRECT REPLACEMENT FOR INTERSIL 2N4351
HIGH DRAIN CURRENT
HIGH GAIN
ABSOLUTE MAXIMUM RATINGS1
ID = 100mA
gfs = 1000µS
@ 25 °C (unless otherwise stated)
Maximum Temperatures
Storage Temperature
-65 to +200 °C
Operating Junction Temperature
-55 to +150 °C
Maximum Power Dissipation
Continuous Power Dissipation
375mW
Maximum Current
Drain to Source
100mA
Maximum Voltages
Drain to Body
25V
Drain to Source
Peak Gate to Source2
25V
±125V
TO-72
BOTTOM VIEW
G 2 3D
S 1 4C
* Body tied to Case.
ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise stated) (VSB = 0V unless otherwise stated)
SYMBOL CHARACTERISTIC
MIN TYP MAX UNITS CONDITIONS
BVDSS
VDS(on)
VGS(th)
IGSS
IDSS
ID(on)
gfs
rDS(on)
Crss
Ciss
Cdb
Drain to Source Breakdown Voltage
Drain to Source "On" Voltage
Gate to Source Threshold Voltage
Gate Leakage Current
Drain Leakage Current "Off"
Drain Current "On"
Forward Transconductance
Drain to Source "On" Resistance
Reverse Transfer Capacitance
Input Capacitance
Drain to Body Capacitance
25
1
3
1000
ID = 10µA, VGS = 0V
1 V ID = 2mA, VGS = 10V
5 VDS = 10V, ID = 10µA
10 pA VGS = ±30V, VDS = 0V
10 nA VDS = 10V, VGS = 0V
mA VGS = 10V, VDS = 10V
µS VDS = 10V, ID = 2mA, f = 1MHz
300 Ω VGS = 10V, ID = 0A, f = 1kHz
1.3 VDS = 0V, VGS = 0V, f = 140kHz
5.0 pF VDS = 10V, VGS = 0V, f = 140kHz
5.0 VDB = 10V, f = 140kHz
Linear Integrated Systems • 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 2N4351.PDF ] | |
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