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PDF TJ15P04M3 Data sheet ( Hoja de datos )

Número de pieza TJ15P04M3
Descripción MOSFETs Silicon P-Channel MOS
Fabricantes Freescale 
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TJ15P04M3
MOSFETs Silicon P-Channel MOS (U-MOS-H)
1. Applications
• DC-DC Converters
• Desktop Computers
2. Features
(1) Low drain-source on-resistance: RDS(ON) = 28 m(typ.) (VGS = -10 V)
(2) Low leakage current: IDSS = -10 µA (max) (VDS = -40 V)
(3) Enhancement mode: Vth = -0.8 to -2.0 V (VDS = -10 V, ID = -0.1 mA)
3. Packaging and Internal Circuit
1: Gate
2: Drain (heatsink)
3: Source
DPAK
4. Absolute Maximum Ratings (Note) (Ta = 25unless otherwise specified)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS -40 V
Gate-source voltage
VGSS
±20
Drain current (DC)
(Note 1)
ID
-15 A
Drain current (pulsed)
(Note 1)
IDP
-45
Power dissipation
(Tc = 25)
PD 29 W
Single-pulse avalanche energy
(Note 2)
EAS
29 mJ
Avalanche current
IAR -15 A
Channel temperature
Tch 150
Storage temperature
Tstg -55 to 150
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1/8
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TJ15P04M3 pdf
8. Characteristics Curves (Note)
Fig. 8.1 ID - VDS
Fig. 8.2 ID - VDS
Fig. 8.3 ID - VGS
Fig. 8.4 VDS - VGS
Fig. 8.5 RDS(ON) - ID
5/8
Fig. 8.6 RDS(ON) - Ta
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