DataSheet.es    


PDF RN2909FS Data sheet ( Hoja de datos )

Número de pieza RN2909FS
Descripción (RN2907FS - RN2909FS) Transistor Silicon PNP Epitaxial Type
Fabricantes Toshiba 
Logotipo Toshiba Logotipo



Hay una vista previa y un enlace de descarga de RN2909FS (archivo pdf) en la parte inferior de esta página.


Total 6 Páginas

No Preview Available ! RN2909FS Hoja de datos, Descripción, Manual

RN2907FS~RN2909FS
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)
RN2907FS,RN2908FS,RN2909FS
Switching, Inverter Circuit, Interface Circuit and
Driver Circuit Applications.
Two devices are incorporated into a fine pitch small mold (6-pin)
package.
Incorporating a bias resistor into a transistor reduces parts count.
Reducing the parts count enables the manufacture of ever more
compact equipment and lowers assembly cost.
Complementary to RN1907FS to RN1909FS
Equivalent Circuit and Bias Resistor Values
0.1±0.05
Unit: mm
1.0±0.05
0.8±0.05
0.1±0.05
16
25
34
C
R1
B
E
Type No.
RN2907FS
RN2908FS
RN2909FS
R1 (kΩ)
10
22
47
R2 (kΩ)
47
47
22
ffSS6
11.E.EMMITIITTETRE1R1 (E(1E)1)
2345623456.....ECCBB.....ECCBBMAAOOMOOAASSLILSSTLLEEILLEETTLLEE12ET21EECCRECCTT2RTTOO2OORRRR1221 (((((EBCBC(((((22221CCBEB)))))12221)))))
JEDEC
JEITA
TOSHIBA
2-1F1D
Weight: 1 mg (typ.)
Absolute Maximum Ratings (Ta = 25°C)
(Q1, Q2 common)
Equivalent Circuit (top view)
Characteristics
Collector-base voltage
Collector-emitter voltage
RN2907FS to
RN2909FS
RN2907FS
Emitter-base voltage
RN2908FS
RN2909FS
Collector current
Collector power dissipation RN2907FS to
Junction temperature
RN2909FS
Storage temperature range
Symbol
VCBO
VCEO
VEBO
IC
PC*
Tj
Tstg
Rating
20
20
6
7
15
50
50
150
55 to 150
Unit
V
V
V
mA
mW
°C
°C
654
Q1 Q2
123
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
*: Total rating
1 2010-07-08
Free Datasheet http://www.datasheet4u.com/

1 page




RN2909FS pdf
Marking
Type Name
RN2907FS
RN2908FS
RN2909FS
Marking
6 54
Type name
H6
1 23
6 54
Type name
H7
1 23
6 54
Type name
H8
1 23
RN2907FS~RN2909FS
Handling Precaution
When handling individual devices (which are not yet mounted on a circuit board), be sure that the environment is
protected against electrostatic discharge. Operators should wear anti-static clothing, and containers and other objects
that come into direct contact with devices should be made of anti-static materials.
5 2010-07-08
Free Datasheet http://www.datasheet4u.com/

5 Page










PáginasTotal 6 Páginas
PDF Descargar[ Datasheet RN2909FS.PDF ]




Hoja de datos destacado

Número de piezaDescripciónFabricantes
RN2909FETOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)Toshiba Semiconductor
Toshiba Semiconductor
RN2909FS(RN2907FS - RN2909FS) Transistor Silicon PNP Epitaxial TypeToshiba
Toshiba

Número de piezaDescripciónFabricantes
SLA6805M

High Voltage 3 phase Motor Driver IC.

Sanken
Sanken
SDC1742

12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.

Analog Devices
Analog Devices


DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.


DataSheet.es    |   2020   |  Privacy Policy  |  Contacto  |  Buscar