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Número de pieza | RN2908FS | |
Descripción | (RN2907FS - RN2909FS) Transistor Silicon PNP Epitaxial Type | |
Fabricantes | Toshiba | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de RN2908FS (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! RN2907FS~RN2909FS
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)
RN2907FS,RN2908FS,RN2909FS
Switching, Inverter Circuit, Interface Circuit and
Driver Circuit Applications.
• Two devices are incorporated into a fine pitch small mold (6-pin)
package.
• Incorporating a bias resistor into a transistor reduces parts count.
Reducing the parts count enables the manufacture of ever more
compact equipment and lowers assembly cost.
• Complementary to RN1907FS to RN1909FS
Equivalent Circuit and Bias Resistor Values
0.1±0.05
Unit: mm
1.0±0.05
0.8±0.05
0.1±0.05
16
25
34
C
R1
B
E
Type No.
RN2907FS
RN2908FS
RN2909FS
R1 (kΩ)
10
22
47
R2 (kΩ)
47
47
22
ffSS6
11.E.EMMITIITTETRE1R1 (E(1E)1)
2345623456.....ECCBB.....ECCBBMAAOOMOOAASSLILSSTLLEEILLEETTLLEE12ET21EECCRECCTT2RTTOO2OORRRR1221 (((((EBCBC(((((22221CCBEB)))))12221)))))
JEDEC
―
JEITA
―
TOSHIBA
2-1F1D
Weight: 1 mg (typ.)
Absolute Maximum Ratings (Ta = 25°C)
(Q1, Q2 common)
Equivalent Circuit (top view)
Characteristics
Collector-base voltage
Collector-emitter voltage
RN2907FS to
RN2909FS
RN2907FS
Emitter-base voltage
RN2908FS
RN2909FS
Collector current
Collector power dissipation RN2907FS to
Junction temperature
RN2909FS
Storage temperature range
Symbol
VCBO
VCEO
VEBO
IC
PC*
Tj
Tstg
Rating
−20
−20
−6
−7
−15
−50
50
150
−55 to 150
Unit
V
V
V
mA
mW
°C
°C
654
Q1 Q2
123
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
*: Total rating
1 2010-07-08
Free Datasheet http://www.datasheet4u.com/
1 page Marking
Type Name
RN2907FS
RN2908FS
RN2909FS
Marking
6 54
Type name
H6
1 23
6 54
Type name
H7
1 23
6 54
Type name
H8
1 23
RN2907FS~RN2909FS
Handling Precaution
When handling individual devices (which are not yet mounted on a circuit board), be sure that the environment is
protected against electrostatic discharge. Operators should wear anti-static clothing, and containers and other objects
that come into direct contact with devices should be made of anti-static materials.
5 2010-07-08
Free Datasheet http://www.datasheet4u.com/
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet RN2908FS.PDF ] |
Número de pieza | Descripción | Fabricantes |
RN2908FE | TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) | Toshiba Semiconductor |
RN2908FS | (RN2907FS - RN2909FS) Transistor Silicon PNP Epitaxial Type | Toshiba |
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