|
|
Número de pieza | PBSS4260QA | |
Descripción | NPN low VCEsat (BISS) transistor | |
Fabricantes | NXP Semiconductors | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de PBSS4260QA (archivo pdf) en la parte inferior de esta página. Total 17 Páginas | ||
No Preview Available ! PBSS4260QA
60 V, 2 A NPN low VCEsat (BISS) transistor
28 August 2013
Product data sheet
1. General description
NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small
DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible
and solderable side pads.
PNP complement: PBSS5260QA.
2. Features and benefits
• Very low collector-emitter saturation voltage VCEsat
• High collector current capability IC and ICM
• High collector current gain hFE at high IC
• High energy efficiency due to less heat generation
• Reduced Printed-Circuit Board (PCB) area requirements
• Solderable side pads
• AEC-Q101 qualified
3. Applications
• Loadswitch
• Battery-driven devices
• Power management
• Charging circuits
• Power switches (e.g. motors, fans)
4. Quick reference data
Table 1.
Symbol
VCEO
IC
ICM
RCEsat
Quick reference data
Parameter
Conditions
collector-emitter
voltage
open base
collector current
peak collector current single pulse; tp ≤ 1 ms
collector-emitter
saturation resistance
IC = 1 A; IB = 0.1 A; pulsed; tp ≤ 300 µs;
δ ≤ 0.02 ; Tamb = 25 °C
Min Typ Max Unit
- - 60 V
- - 2A
- - 3A
- 130 180 mΩ
Scan or click this QR code to view the latest information for this product
Free Datasheet http://www.datasheet4u.com/
1 page NXP Semiconductors
PBSS4260QA
60 V, 2 A NPN low VCEsat (BISS) transistor
103
Zth(j-a)
(K/W)
102
duty cycle = 1
0.75
0.5
0.33
0.2
0.1
0.05
10 0.02
0.01
aaa-007845
0
1
10-5
10-4
10-3
10-2
10-1
FR4 PCB, single-sided copper, standard footprint
1
10 102 103
tp (s)
Fig. 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
103 aaa-007846
Zth(j-a)
(K/W)
102
10
duty cycle = 1
0.75
0.5
0.33
0.2
0.1
0.05
0.02
0.01
10
10-1
10-5
10-4
10-3
10-2
FR4 PCB, single-sided copper, 1 cm2
10-1
1
10 102 103
tp (s)
Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PBSS4260QA
Product data sheet
All information provided in this document is subject to legal disclaimers.
28 August 2013
© NXP N.V. 2013. All rights reserved
5 / 17
Free Datasheet http://www.datasheet4u.com/
5 Page NXP Semiconductors
PBSS4260QA
60 V, 2 A NPN low VCEsat (BISS) transistor
11. Test information
IB
90 %
10 %
IC
90 %
IBon (100 %)
input pulse
(idealized waveform)
IBoff
output pulse
(idealized waveform)
IC (100 %)
10 %
td tr
ton
Fig. 16. BISS transistor switching time definition
VBB
VCC
ts
toff
t
tf
006aaa003
oscilloscope
(probe)
450 Ω
VI
RB
R2
R1
Fig. 17. Test circuit for switching times
RC
Vo (probe) oscilloscope
450 Ω
DUT
mlb826
11.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
PBSS4260QA
Product data sheet
All information provided in this document is subject to legal disclaimers.
28 August 2013
© NXP N.V. 2013. All rights reserved
11 / 17
Free Datasheet http://www.datasheet4u.com/
11 Page |
Páginas | Total 17 Páginas | |
PDF Descargar | [ Datasheet PBSS4260QA.PDF ] |
Número de pieza | Descripción | Fabricantes |
PBSS4260QA | NPN low VCEsat (BISS) transistor | NXP Semiconductors |
Número de pieza | Descripción | Fabricantes |
SLA6805M | High Voltage 3 phase Motor Driver IC. |
Sanken |
SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
Analog Devices |
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |