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Número de pieza | PBSS5160QA | |
Descripción | PNP low VCEsat (BISS) transistor | |
Fabricantes | NXP Semiconductors | |
Logotipo | ||
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No Preview Available ! PBSS5160QA
60 V, 1 A PNP low VCEsat (BISS) transistor
23 August 2013
Product data sheet
1. General description
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small
DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible
and solderable side pads.
NPN complement: PBSS4160QA.
2. Features and benefits
• Very low collector-emitter saturation voltage VCEsat
• High collector current capability IC and ICM
• High collector current gain hFE at high IC
• High energy efficiency due to less heat generation
• Reduced Printed-Circuit Board (PCB) area requirements
• Solderable side pads
• AEC-Q101 qualified
3. Applications
• Loadswitch
• Battery-driven devices
• Power management
• Charging circuits
• Power switches (e.g. motors, fans)
4. Quick reference data
Table 1.
Symbol
VCEO
IC
ICM
RCEsat
Quick reference data
Parameter
Conditions
collector-emitter
voltage
open base
collector current
peak collector current tp ≤ 1 ms; pulsed
collector-emitter
saturation resistance
IC = -1 A; IB = -100 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
Min Typ Max Unit
- - -60 V
- - -1 A
- - -1.5 A
- 225 330 mΩ
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Free Datasheet http://www.datasheet4u.com/
1 page NXP Semiconductors
PBSS5160QA
60 V, 1 A PNP low VCEsat (BISS) transistor
103
Zth(j-a)
(K/W)
102
duty cycle = 1
0.75
0.5
0.33
0.2
0.1
0.05
10 0.02
0.01
aaa-007845
0
1
10-5
10-4
10-3
10-2
10-1
FR4 PCB, single-sided copper, standard footprint
1
10 102 103
tp (s)
Fig. 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
103 aaa-007846
Zth(j-a)
(K/W)
102
10
duty cycle = 1
0.75
0.5
0.33
0.2
0.1
0.05
0.02
0.01
10
10-1
10-5
10-4
10-3
10-2
FR4 PCB, single-sided copper, 1 cm2
10-1
1
10 102 103
tp (s)
Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PBSS5160QA
Product data sheet
All information provided in this document is subject to legal disclaimers.
23 August 2013
© NXP N.V. 2013. All rights reserved
5 / 17
Free Datasheet http://www.datasheet4u.com/
5 Page NXP Semiconductors
PBSS5160QA
60 V, 1 A PNP low VCEsat (BISS) transistor
11. Test information
- IB
90 %
10 %
- IC
90 %
- IBon (100 %)
input pulse
(idealized waveform)
- IBoff
output pulse
(idealized waveform)
- IC (100 %)
10 %
td tr
t on
Fig. 16. BISS transistor switching time definition
VBB
VCC
ts
t off
t
tf
006aaa266
oscilloscope (probe)
450 Ω
VI
RB
R2
R1
Fig. 17. Test circuit for switching times
RC
Vo (probe) oscilloscope
450 Ω
DUT
mgd624
11.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
PBSS5160QA
Product data sheet
All information provided in this document is subject to legal disclaimers.
23 August 2013
© NXP N.V. 2013. All rights reserved
11 / 17
Free Datasheet http://www.datasheet4u.com/
11 Page |
Páginas | Total 17 Páginas | |
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