PDF 2SC5509 Data sheet ( Hoja de datos )

Número de pieza	2SC5509
Descripción	NPN SILICON RF TRANSISTOR
Fabricantes	Renesas
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No Preview Available ! 2SC5509 Preliminary Data Sheet NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER, LOW-NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) R09DS0056EJ0300 Rev.3.00 Mar 5, 2013 FEATURES • Ideal for medium output power amplification • NF = 1.2 dB TYP., Ga = 12 dB TYP. @ VCE = 2 V, IC = 10 mA, f = 2 GHz • Maximum available power gain: MAG = 14 dB TYP. @ VCE = 2 V, IC = 50 mA, f = 2 GHz • fT = 25 GHz technology adopted • Flat-lead 4-pin thin-type super minimold (M04) package <R> ORDERING INFORMATION Part Number 2SC5509 2SC5509-T2 Order Number 2SC5509-A 2SC5509-T2-A Quantity 50 pcs (Non reel) 3 kpcs/reel Package Flat-lead 4-pin thin-type super minimold (M04) (Pb-Free) Supplying Form • 8 mm wide embossed taping • Pin 1 (Emitter), Pin 2 (Collector) face the perforation side of the tape Remark To order evaluation samples, please contact your nearby sales office. The unit sample quantity is 50 pcs. ABSOLUTE MAXIMUM RATINGS (TC = 25°C) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Note Free air. Symbol VCBO VCEO VEBO IC PtotNote Tj Tstg Ratings 15 3.3 1.5 100 190 150 −65 to +150 Unit V V V mA mW °C °C THERMAL RESISTANCE Parameter Junction to Case Resistance Junction to Ambient Resistance Symbol Rth j-c Rth j-a Ratings 95 650 Unit °C /W °C /W CAUTION Observe precautions when handling because these devices are sensitive to electrostatic discharge. The mark <R> shows major revised points. The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field. R09DS0056EJ0300 Rev.3.00 Mar 5, 2013 Page 1 of 8 Free Datasheet http://www.datasheet4u.com/ 1 page 2SC5509 Noise Characteristics NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT 6.0 VCE = 2 V f = 1 GHz 5.0 30 25 4.0 Ga 20 3.0 15 2.0 10 1.0 0.0 1 NF 10 Collector Current IC (mA) 5 0 100 NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT 6.0 VCE = 2 V f = 2 GHz 5.0 30 25 4.0 20 3.0 Ga 15 2.0 10 1.0 0.0 1 NF 10 Collector Current IC (mA) 5 0 100 Chapter Title NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT 6.0 VCE = 2 V f = 1.5 GHz 5.0 30 25 4.0 20 Ga 3.0 15 2.0 10 1.0 0.0 1 NF 10 Collector Current IC (mA) 5 0 100 NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT 6.0 VCE = 2 V f = 2.5 GHz 5.0 30 25 4.0 20 3.0 15 Ga 2.0 10 1.0 0.0 1 NF 10 Collector Current IC (mA) 5 0 100 Remark The graphs indicate nominal characteristics. <R> S-PARAMETERS S-parameters and noise parameters are provided on our web site in a form (S2P) that enables direct import of the parameters to microwave circuit simulators without the need for keyboard inputs. Click here to download S-parameters. [Products] → [RF Devices] → [Device Parameters] URL http://www.renesas.com/products/microwave/ R09DS0056EJ0300 Rev.3.00 Mar 5, 2013 Page 5 of 8 Free Datasheet http://www.datasheet4u.com/ 5 Page

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