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PDF 2SC5336 Data sheet ( Hoja de datos )

Número de pieza 2SC5336
Descripción NPN SILICON RF TRANSISTOR
Fabricantes Renesas 
Logotipo Renesas Logotipo



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No Preview Available ! 2SC5336 Hoja de datos, Descripción, Manual

To our customers,
Old Company Name in Catalogs and Other Documents
On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology
Corporation, and Renesas Electronics Corporation took over all the business of both
companies. Therefore, although the old company name remains in this document, it is a valid
Renesas Electronics document. We appreciate your understanding.
Renesas Electronics website: http://www.renesas.com
April 1st, 2010
Renesas Electronics Corporation
Issued by: Renesas Electronics Corporation (http://www.renesas.com)
Send any inquiries to http://www.renesas.com/inquiry.
Free Datasheet http://www.datasheet4u.com/

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2SC5336 pdf
2SC5336
TYPICAL CHARACTERISTICS (Unless otherwise specified, TA = +25°C)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
Mounted on Ceramic Substrate
(16 cm2 × 0.7 mm (t) )
2.0
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
5.0
f = 1 MHz
3.0
2.0
1.0
0 50 100
Ambient Temperature TA (˚C)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
200
VCE = 10 V
100
150
50
20
10
0.5
1 5 10
Collector Current IC (mA)
50
INSERTION POWER GAIN, MAG
vs. FREQUENCY
|S21e|2
20
VCE = 10 V
IC = 20 mA
MAG
1.0
0.5
0.3
1 3 5 10 20 30
Collector to Base Voltage VCB (V)
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
10
VCE = 10 V
f = 1 GHz
5
3
2
1
0.5
0.3
1
3 5 10 20 30 50
Collector Current IC (mA)
INSERTION POWER GAIN
vs. COLLECTOR CURRENT
15
VCE = 10 V
f = 1 GHz
10
10 5
0
0.2 0.4 0.6 0.8 1.0 1.4 2.0
Frequency f (GHz)
0
1
3 5 10 20 30 50 100
Collector Current IC (mA)
Data Sheet P10938EJ2V0DS
3
Free Datasheet http://www.datasheet4u.com/

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