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PDF TC3873 Data sheet ( Hoja de datos )
| Número de pieza | TC3873 | |
| Descripción | 5.25 - 5.875 GHz 3W prematched FETs | |
| Fabricantes | Transcom | |
| Logotipo |  |
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5.25 – 5.875 GHz 3W prematched FETs
PTREC2_230088170234
FEATURES
z P-1 dB: 34.5dBm
z Small Signal Gain: 11 dB
z Power Added Efficiency: 45 %
z IP3: 43.5 dBm
z Input/Output Prematched
z Bias condition: 750 mA @ 8 V
PHOTO ENLARGEMENT
DESCRIPTION
The TC3873 is a prematched GaAs PHEMT hybrid device. It is designed for use in low cost, high
volume, and 5.25~5.875 GHz 3W amplifiers. It provides a typical gain of 11dB and P1dB of
34.5dBm. The device is packed in a copper based ceramic 10 pins SMT packages. The copper based
carrier of the package allows direct soldering of the device to the PCB..
ELECTRICAL SPECIFICATIONS (TA=25 °C)
Symbol
FREQ
SSG
P-1 dB
IP3
VDD
IDD
Vg
,
Conditions
Frequency Range
Small Signal Gain
Output Power at 1 dB Gain Compression
Third Order Intercept Point @ PSCL=21 dbm
Supply Voltage
Current Supply Without RF
Gate Voltage
Power Added Efficiency
MIN
5.25
10
33.5
42.5
-0.5
TYP
11
34.5
43.5
8
750
-1.0
45
MAX
5.875
-1.5
UNIT
GHz
dB
dBm
dBm
Volt
mA
Volt
%
Absolute Maximum Ratings
Symbol Parameter/Conditions
Vdd Drain-Source Voltage
Pin RF Input Power
Pt Power Dissipation
Tch Operating Channel Temperature
TSTG Storage Temperature
Min.
27.5
11.5
-65
Max.
10
175
175
Units
Volts
dBm
W
°C
°C
Note:
1. This GaAs FET is susceptible to damage from
Electrostatic Discharge. Proper precautions
should be used when handling these devices.
2. Specifications subject to change without notice.
TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C.
Web-Site: www.transcominc.com.tw
Phone: 886-6-5050086
Fax: 886-6-5051602
1/1
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| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet TC3873.PDF ] | |
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