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PDF NOIS1SM1000S Data sheet ( Hoja de datos )
| Número de pieza | NOIS1SM1000S | |
| Descripción | 1M Pixel Radiation Hard CMOS Image Sensor | |
| Fabricantes | ON Semiconductor | |
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NOIS1SM1000S,
NOIS1SM1000A
STAR1000 1M Pixel
Radiation Hard CMOS
Image Sensor
Features
• 1024 x 1024 Active Pixels
• 15 mm x 15 mm Pixel Size
• 1 inch − 35 mm Optical Format
• High Radiation Tolerance
• High Sensitivity
• Low Noise
• Monochrome and Color
• 11 Frames per Second (fps) at Full Resolution
• On-chip 10-bit Analog-to-Digital Converter (ADC)
• Region of Interest (ROI) Readout
• Windowed and Subsampled Readout
• Rolling Shutter
• On-chip Fixed Pattern Noise (FPN) Correction
• Ceramic JLCC-84 Package
• BK7G18 Glass with N2 Filled Cavity
• 400 mW Power Dissipation
• These Devices are Pb−Free and are RoHS Compliant
http://onsemi.com
Applications
Standard market Applications
• Nuclear Inspection
Space Applications
• Space Science
• Star Trackers
• Sun Sensors
Figure 1. STAR1000 in 84−Pin Ceramic
JLCC Package
JLDCC84
CASE 114AK
Description
The STAR1000 is a CMOS image sensor with 1024 by 1024 pixels on a 15 mm x 15 mm pitch. It features on-chip Fixed
Pattern Noise (FPN) correction, a programmable gain amplifier, and a 10-bit Analog-to-Digital Converter (ADC).
All circuits are designed using the radiation tolerant design techniques to allow high tolerance against Radiation effects.
Registers which contain the X- and Y- addresses of the read out pixels can be directly accessed by the external controller.
This architecture provides for flexible operation and allows different operation modes such as (multiple) windowing,
subsampling, and so on.
The STAR1000 is assembled using a BK7G18 glass lid with a Nitrogen-filled cavity which increases the temperature
operating range. The STAR1000 flight model has additional screening to space qualified standards.
ORDERING INFORMATION
Marketing Part Number
Description
NOIS1SM1000A-HHC
Mono with BK7G18 Glass, Engineering Model
NOIS1SM1000S-HHC
Mono with BK7G18 Glass, Flight Model
NOIS1SM1000A-HWC
Mono windowless, Engineering Model
NOIS1SM1000S-HWC
Mono windowless, Flight Model
NOIS1SC1000A-HHC
Color with BK7G18 Glass, Engineering Model
Status
Production
Risk Production
Engineering
Package
84 pin JLCC
case 114AK
© Semiconductor Components Industries, LLC, 2013
October, 2013 − Rev. 11
1
Publication Order Number:
NOIS1SM1000A/D
Free Datasheet http://www.datasheet4u.com/
1 page  
NOIS1SM1000S, NOIS1SM1000A
APPLICABLE DOCUMENTS
The following documents form part of this specification and shall be read in conjunction with it:
No.
AD01
AD02
Reference
ESCC Generic Specification 9020
CISP spec# 001-06225
Title
Charge Coupled Devices, Silicon, Photosensitive
Electro-optical test methods for CMOS image
sensors
AD03 JESD22-A114-B
Electrostatic Discharge (ESD) Sensitivity Testing
Human Body Model (HBM)
AD04
AD05
APS-FF-SC-03-010
CISP spec# 001-49283
Process Identification Document
Visual Inspection for FM devices
NOTE: CISP # − CMOS Image Sensor Products, ON Semiconductor
Issue
2.0
E
B
3.0
1
Date
March 2010
October, 2008
June, 2000
January, 2008
TERMS, DEFINITIONS ABBREVIATIONS, SYMBOLS AND UNITS
For the purpose of this specification, the terms,
definitions, abbreviations, symbols and units specified in
ESCC basic Specification 21300 shall apply.
The following formulas are applicable to convert %Vsat
and mV/s into e- and e-/s:
•
FPN[e
*]
+
FPN[%Vsat] * Vsat
conversion_gain
•
Dark_signal[e
*
ń s]
+
Dark_signal[V ń s]
conversion_gain
•
DSNU[e
*]
+
DSNU[%Vsat] * Vsat
conversion_gain
• Conversion gain for STAR1000: 11.5 mV/e-
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5
Free Datasheet http://www.datasheet4u.com/
5 Page 
NOIS1SM1000S, NOIS1SM1000A
Electrical and electro-optical measurements
Electrical and Electro-Optical measurements at high and
low temperature
The engineering model option is screened for room temp
only, while the flight model option is screened over the full
guaranteed temperature range.
Circuits for electrical and electro-optical measurements
A Circuit for performing the electro-optical tests shown
below is shown in Figure 2.
Table 11. ELECTRICAL CHARACTERISTICS
(under nominal bias conditions at nominal pixel rate with Tj = 22 ±3°C in “soft reset”, unless otherwise stated)
Characteristics
Limits
Units
Min Typ Max
Total power supply current stand-by
53.8 56.6
mA
Total power supply current, operational
57.4 60.8
mA
Power supply current to ADC, operational
44.6 48
mA
Power supply current to image core, operational
12.8 14
mA
Input impedance digital input
200 KW
Input impedance Dark Reference input
200 KW
Input impedance ADC input
200 KW
Output impedance digital outputs. (Note 1)
200 − 700
W
Output impedance analog output. (Note 1)
100 W
Output amplifier voltage range
0.5 4.5 V
Dark reference offset. (Note 2)
0.6 0.93
V
Output amplifier gain setting 1. (Note 3)
3.95 4.45 4.96
Output amplifier gain setting 2. (Note 3)
2.05 2.30 2.55
Output amplifier gain setting 3. (Note 3)
7.36 8.38 9.40
ADC ladder network resistance
1054
1174
1295
W
ADC ladder network temperature coefficient for
temperature range −40°C to +85°C
4.53 W/°C
ADC Differential non linearity
3.89 8.4 LSB
ADC Integral non linearity
1.29 1.95 LSB
ADC set-up time to attain 1% conversion accuracy
250 ns
ADC delay time
72 ns
1. The output impedance varies for different digital outputs and is dependent on the metal routing, where D9 has the longest routing and D0
has the shortest routing, providing a typical range of 200-700 ohms inclusive of the ESD resistance.
2. Dark reference offset specifies the offset between the applied dark reference voltage and the actual level at the analogue output terminal.
Specified at gain setting 0.
3. Gain specification relative to gain setting 0.
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