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PDF 2N4123 Data sheet ( Hoja de datos )
| Número de pieza | 2N4123 | |
| Descripción | NPN General Purpose Amplifier | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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Discrete POWER & Signal
Technologies
C
BE
TO-92
NPN General Purpose Amplifier
This device is designed for use as general purpose amplifiers
and switches requiring collector currents to 100 mA. Sourced
from Process 23. See 2N3904 for characteristics.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
Parameter
Value
VCEO
Collector-Emitter Voltage
30
VCBO
Collector-Base Voltage
40
VEBO
Emitter-Base Voltage
5.0
IC
TJ, Tstg
Collector Current - Continuous
Operating and Storage Junction Temperature Range
200
-55 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol
Characteristic
PD Total Device Dissipation
Derate above 25°C
RθJC Thermal Resistance, Junction to Case
RθJA Thermal Resistance, Junction to Ambient
Max
2N4123
625
5.0
83.3
200
Units
V
V
V
mA
°C
Units
mW
mW/°C
°C/W
°C/W
© 1997 Fairchild Semiconductor Corporation
1 page | ||
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