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PDF IRLHS6376PBF Data sheet ( Hoja de datos )
| Número de pieza | IRLHS6376PBF | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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VDS
VGS
RDS(on) max
(@VGS = 4.5V)
RDS(on) max
(@VGS = 2.5V)
ID
(@Tc(Bottom) = 25°C)
30
±12
63
82
d3.4
V
V
mΩ
mΩ
A
PD - 97607A
IRLHS6376PbF
HEXFET® Power MOSFET
D1
G2
S2
D2
D1
S1
G1
D2
2mm x 2mm Dual PQFN
Applications
• Charge and discharge switch for battery application
• Load/System Switch
Features and Benefits
Features
Low RDSon (≤ 63mΩ)
Low Thermal Resistance to PCB (≤ 19°C/W)
Low Profile (≤ 1.0mm)
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
Resulting Benefits
Lower Conduction Losses
Enable better thermal dissipation
results in Increased Power Density
⇒ Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Orderable part number Package Type
IRLHS6376TRPBF
IRLHS6376TR2PBF
PQFN Dual 2mm x 2mm
PQFN Dual 2mm x 2mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Tape and Reel
400
Note
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC(Bottom) = 25°C
ID @ TC(Bottom) = 100°C
ID @ TC(Bottom) = 25°C
IDM
PD @TA = 25°C
PD @TC(Bottom) = 25°C
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 4.5V
Continuous Drain Current, VGS @ 4.5V
Continuous Drain Current, VGS @ 4.5V
Continuous Drain Current, VGS @ 4.5V
cContinuous Drain Current, VGS @ 4.5V (Package Limited)
Pulsed Drain Current
fPower Dissipation
fPower Dissipation
fLinear Derating Factor
TJ
TSTG
Operating Junction and
Storage Temperature Range
Max.
30
±12
3.6d
2.9
7.6d
4.9d
3.4d
30
1.5
6.6
0.012
-55 to + 150
Units
V
A
W
W/°C
°C
Notes through are on page 2
www.irf.com
1
Free Datasheet 0ht7tp/:1//9w/w1w1.datasheet4u.com/
1 page  
140
ID = 3.4A
120
100
TJ = 125°C
80
60 TJ = 25°C
40
0 2 4 6 8 10 12
VGS, Gate -to -Source Voltage (V)
Fig 12. On-Resistance vs. Gate Voltage
50
ID
TOP 0.78A
40 1.6A
BOTTOM 3.4A
30
20
10
IRLHS6376PbF
300
250
200 VGS = 2.5V
150
100
50 VGS = 4.5V
0
0 5 10 15 20 25 30
ID, Drain Current (A)
Fig 13. Typical On-Resistance vs. Drain Current
400
300
200
100
0
25 50 75 100 125 150
Starting TJ , Junction Temperature (°C)
Fig 14. Maximum Avalanche Energy vs. Drain Current
0
1E-5
1E-4
1E-3
1E-2
1E-1
Time (sec)
Fig 15. Typical Power vs. Time
1E+0
+
-
RG
www.irf.com
D.U.T
+
Driver Gate Drive
P.W.
Period
D=
P.W.
Period
Circuit Layout Considerations
• Low Stray Inductance
-
• Ground Plane
• Low Leakage Inductance
Current Transformer
- +
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
• dv/dt controlled by RG
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
VDD
+
-
Re-Applied
Voltage
Body Diode
Inductor Curent
Forward Drop
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 16. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
*VGS=10V
VDD
ISD
5
Free Datasheet http://www.datasheet4u.com/
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet IRLHS6376PBF.PDF ] | |
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