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PDF IRLHS6276PBF Data sheet ( Hoja de datos )
| Número de pieza | IRLHS6276PBF | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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VDS
VGS
RDS(on) max
(@VGS = 4.5V)
RDS(on) max
(@VGS = 2.5V)
ID
(@Tc(Bottom) = 25°C)
20
±12
45
62
d3.4
V
V
mΩ
mΩ
A
PD - 97570B
IRLHS6276PbF
HEXFET® Power MOSFET
D1
G2
S2
D2
D1
S1
G1
D2
2mm x 2mm Dual PQFN
Applications
• Charge and discharge switch for battery application
• Load/System Switch
Features and Benefits
Features
Low RDSon (≤ 45mΩ)
Low Thermal Resistance to PCB (≤ 19°C/W)
Low Profile (≤ 1.0mm)
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
results in
⇒
Resulting Benefits
Lower Conduction Losses
Enable better thermal dissipation
Increased Power Density
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Orderable part number Package Type
IRLHS6276TRPBF
IRLHS6276TR2PBF
PQFN Dual 2mm x 2mm
PQFN Dual 2mm x 2mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Tape and Reel
400
Note
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC(Bottom) = 25°C
ID @ TC(Bottom) = 100°C
ID @ TC(Bottom) = 25°C
IDM
PD @TA = 25°C
PD @TC(Bottom) = 25°C
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 4.5V
Continuous Drain Current, VGS @ 4.5V
Continuous Drain Current, VGS @ 4.5V
Continuous Drain Current, VGS @ 4.5V
cContinuous Drain Current, VGS @ 4.5V (Package Limited)
Pulsed Drain Current
fPower Dissipation
fPower Dissipation
fLinear Derating Factor
TJ
TSTG
Operating Junction and
Storage Temperature Range
Notes through are on page 2
www.irf.com
Max.
20
±12
4.5d
3.6d
9.6d
6.1d
3.4d
40
1.5
6.6
0.012
-55 to + 150
Units
V
A
W
W/°C
°C
1
Free Datasheet0h7tt/p1:/9/w/1w1w.datasheet4u.com/
1 page  
IRLHS6276PbF
100 250
ID = 3.4A
80 200
60 TJ = 125°C
VGS = 2.5V
150
40
20 TJ = 25°C
100
VGS = 4.5V
50
0
0 2 4 6 8 10 12
Fig 12. OVnG-SR, eGsaitset-aton-cSeouvrsc.eGVoalttaegVe o(Vlta) ge
60
ID
50 TOP 0.89A
1.8A
BOTTOM 3.4A
40
30
20
10
0
25 50 75 100 125 150
Starting TJ , Junction Temperature (°C)
Fig 14. Maximum Avalanche Energy vs. Drain Current
0
0 5 10 15 20 25 30
ID, Drain Current (A)
Fig 13. Typical On-Resistance vs. Drain Current
1000
800
600
400
200
0
1E-5
1E-4
1E-3
1E-2
1E-1
Time (sec)
Fig 15. Typical Power vs. Time
1E+0
+
-
RG
www.irf.com
D.U.T
+
Driver Gate Drive
P.W.
Period
D=
P.W.
Period
Circuit Layout Considerations
• Low Stray Inductance
-
• Ground Plane
• Low Leakage Inductance
Current Transformer
- +
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
• dv/dt controlled by RG
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
VDD
+
-
Re-Applied
Voltage
Body Diode
Inductor Curent
Forward Drop
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 16. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
*VGS=10V
VDD
ISD
5
Free Datasheet http://www.datasheet4u.com/
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet IRLHS6276PBF.PDF ] | |
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