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PDF IRLHM620PBF Data sheet ( Hoja de datos )
| Número de pieza | IRLHM620PBF | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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VDS
VGS max
RDS(on) max
(@VGS = 4.5V)
RDS(on) max
(@VGS = 2.5V)
Qg (typical)
ID
(@Tc(Bottom) = 25°C)
20
±12
2.5
3.5
V
V
mΩ
mΩ
D5
D6
D7
D8
52 nC
40h A
Applications
• Battery Operated DC Motor Inverter MOSFET
• Secondary Side Synchronous Rectification MOSFET
Features and Benefits
Features
Low RDSon (<2.5mΩ)
Low Thermal Resistance to PCB (<3.4°C/W)
Low Profile (<1.0mm)
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Industrial Qualification
PD - 97565A
IRLHM620PbF
HEXFET® Power MOSFET
4G
3S
2S
1S
3.3mm x 3.3mm PQFN
Benefits
Lower Conduction Losses
Enable better thermal dissipation
results in Increased Power Density
⇒ Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Orderable part number
Package Type
IRLHM620TRPBF
IRLHM620TR2PBF
PQFN 3.3mm x 3.3mm
PQFN 3.3mm x 3.3mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Tape and Reel
400
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC(Bottom) = 25°C
ID @ TC(Bottom) = 100°C
IDM
PD @TA = 25°C
PD @TC(Bottom) = 25°C
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 4.5V
Continuous Drain Current, VGS @ 4.5V
Continuous Drain Current, VGS @ 4.5V
cContinuous Drain Current, VGS @ 4.5V
Pulsed Drain Current
gPower Dissipation
gPower Dissipation
gLinear Derating Factor
TJ
TSTG
Operating Junction and
Storage Temperature Range
Notes through
are on page 8
www.irf.com
Max.
20
±12
26
21
40
40
160
2.7
37
0.022
-55 to + 150
Note
Units
V
A
W
W/°C
°C
1
Free Datashee1t 1ht/t4p://2/w0w1w0.datasheet4u.com/
1 page  
7
ID = 20A
6
5
4
TJ = 125°C
3
2
TJ = 25°C
1
0 2 4 6 8 10 12
VGS, Gate -to -Source Voltage (V)
Fig 12. On-Resistance vs. Gate Voltage
IRLHM620PbF
500
ID
TOP 5.8A
400 12A
BOTTOM 20A
300
200
100
0
25 50 75 100 125 150
Starting TJ , Junction Temperature (°C)
Fig 13. Maximum Avalanche Energy vs. Drain Current
15V
VDS
L
RG
20V
tp
D.U.T
IAS
0.01Ω
DRIVER
+
-
VDD
A
Fig 14a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
IAS
Fig 14b. Unclamped Inductive Waveforms
VDS
VGS
RG
RD
D.U.T.
V1G0SV
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1
+-VDD
Fig 15a. Switching Time Test Circuit
www.irf.com
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 15b. Switching Time Waveforms
5
Free Datasheet http://www.datasheet4u.com/
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet IRLHM620PBF.PDF ] | |
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