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Número de pieza | IRLH5036PBF | |
Descripción | Power MOSFET ( Transistor ) | |
Fabricantes | International Rectifier | |
Logotipo | ||
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IRLH5036PbF
VDS
RDS(on) max
(@VGS = 4.5V)
Qg (typical)
RG (typical)
ID
(@Tc(Bottom) = 25°C)
60
5.5
44
1.2
100h
V
mΩ
nC
Ω
A
HEXFET® Power MOSFET
PQFN 5X6 mm
Applications
• Secondary Side Synchronous Rectification
• Inverters for DC Motors
• DC-DC Brick Applications
• Boost Converters
Features and Benefits
Features
Low RDSon (< 5.5 mΩ @ Vgs = 4.5V )
Low Thermal Resistance to PCB (< 0.5°C/W)
100% Rg tested
Low Profile (<0.9 mm)
Benefits
Lower Conduction Losses
Enables better thermal dissipation
Increased Reliability
results in Increased Power Density
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Industrial Qualification
⇒ Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Orderable part number
Package Type
IRLH5036TRPBF
IRLH5036TR2PBF
PQFN 5mm x 6mm
PQFN 5mm x 6mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Tape and Reel
400
Note
Absolute Maximum Ratings
VDS
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC(Bottom) = 25°C
ID @ TC(Bottom) = 100°C
IDM
PD @TA = 25°C
PD @ TC(Bottom) = 25°C
TJ
TSTG
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
cContinuous Drain Current, VGS @ 10V
Pulsed Drain Current
gPower Dissipation
gPower Dissipation
gLinear Derating Factor
Operating Junction and
Storage Temperature Range
Notes through are on page 8
www.irf.com
Max.
60
± 16
20
16
h100
h100
400
3.6
250
0.029
-55 to + 150
Units
V
A
W
W/°C
°C
1
Free Datasheet 0ht4tp/:1//2w/w1w0.datasheet4u.com/
1 page 12
ID = 50A
10
8
TJ = 125°C
6
4
TJ = 25°C
2
2 4 6 8 10 12 14 16
VGS, Gate -to -Source Voltage (V)
Fig 12. On-Resistance vs. Gate Voltage
IRLH5036PbF
1200
1000
800
ID
TOP 15A
18A
BOTTOM 50A
600
400
200
0
25 50 75 100 125 150
Starting TJ , Junction Temperature (°C)
Fig 13. Maximum Avalanche Energy vs. Drain Current
15V
VDS
L
RG
20V
tp
D.U.T
IAS
0.01Ω
DRIVER
+
-
VDD
A
Fig 14a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
IAS
Fig 14b. Unclamped Inductive Waveforms
VDS
VGS
RG
RD
D.U.T.
V1G0SV
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1
+-VDD
Fig 15a. Switching Time Test Circuit
www.irf.com
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 15b. Switching Time Waveforms
5
Free Datasheet http://www.datasheet4u.com/
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet IRLH5036PBF.PDF ] |
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IRLH5036PBF | Power MOSFET ( Transistor ) | International Rectifier |
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