DataSheet.es    


PDF 2N3957 Data sheet ( Hoja de datos )

Número de pieza 2N3957
Descripción N-Channel Dual Silicon Junction Field-Effect Transistor
Fabricantes ETC 
Logotipo ETC Logotipo



Hay una vista previa y un enlace de descarga de 2N3957 (archivo pdf) en la parte inferior de esta página.


Total 1 Páginas

No Preview Available ! 2N3957 Hoja de datos, Descripción, Manual

B-6
2N3957, 2N3958
N-Channel Dual Silicon Junction Field-Effect Transistor
01/99
¥ Low and Medium Frequency
Differential Amplifiers
¥ High Input Impedance
Amplifiers
Absolute maximum ratings at TA = 25¡C
Reverse Gate Source & Reverse Gate Drain Voltage
Gate Current
Total Device Power Dissipation (each side)
@ 85°C Case Temperature (both sides)
Power Derating (both sides)
– 50 V
50 mA
250 mW
500 mW
4.3 mW/°C
At 25°C free air temperature:
Static Electrical Characteristics
Gate Source Breakdown Voltage
Gate Reverse Current
Gate Operating Current
Gate Source Voltage
Gate Source Cutoff Voltage
Gate Source Forward Voltage
Drain Saturation Current (Pulsed)
Dynamic Electrical Characteristics
Common Source
Forward Transconductance
Common Source Output Conductance
Common Source Input Capacitance
Drain Gate Capacitance
Common Source
Reverse Transfer Capacitance
V(BR)GSS
IGSS
IG
VGS
VGS(OFF)
VGS(F)
IDSS
2N3957 2N3958
Min Max Min Max Unit
– 50 – 50
V
– 100
– 100 pA
– 500
– 500 nA
– 50 – 50 pA
– 250
– 250 nA
– 4.2 – 4.2 V
– 0.5 – 4 – 0.5 – 4 V
– 1 – 4.5 – 1 – 4.5 V
2 2V
0.5 5 0.5 5 mA
1000 3000 1000 3000 µS
gfs 1000 1000 µS
gos 35 35 µS
Ciss 4 4 pF
Cdgo 1.5 1.5 pF
Crss 1.2 1.2 pF
Noise Figure
Differential Gate Current
Saturation Drain Current Ratio
Differential Gate Source Voltage
Differential Gate Source
Voltage with Temperature
Transconductance Ratio
NF 0.5 0.5 dB
| IG1 – IG2 |
IDSS1 / IDSS2 0.9
| VGS1 – VGS2 |
VGS1– VGS2
T
10 10
1 0.85 1
20 25
68
7.5 10
nA
mV
mV
mV
gfs1 / gfs2 0.9 1 0.85 1
Process NJ16
Test Conditions
IG = – 1 µA, VDS = ØV
VGS = – 30V, VDS = ØV
VGS = – 30V, VDS = ØV
VDS = 20V, ID = 200 µA
VDS = 20V, ID = 200 µA
VDS = 20V, ID = 50 µA
VDS = 20V, ID = 200 µA
VDS = 20V, ID = 1 nA
VDS = Ø, IG = 1 mA
VDS = 20V, VGS = ØV
TA = 125°C
TA = 125°C
VDS = 20V, VGS = ØV
VDS = 20V, VGS = ØV
VDS = 20V, VGS = ØV
VDS = 20V, VGS = ØV
VDS = 10V, IS = ØA
VDS = 20V, VGS = ØV
VDS = 20V, VGS = ØV
RG = 10 M
VDS = 20V, ID = 200 µA
VDS = 20V, VGS = ØV
VDS = 20V, ID = 200 µA
VDS = 20V, ID = 200 µA
VDS = 20V, ID = 200 µA
VDS = 20V, ID = 200 µA
f = 1 kHz
f = 200 MHz
f = 1 kHz
f = 1 MHz
f = 1 MHz
f = 1 MHz
f = 100 Hz
TA = 125°C
TA = 25°C
to – 55°C
TA = 25°C
to 125°C
f = 1 kHz
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287 FAX (972) 276-3375
TOÐ71 Package
See Section G for Outline Dimensions
Pin Configuration
1 Source, 2 Drain, 3 Gate, 5 Source,
6 Drain, 7 Gate
www.interfet.com

1 page





PáginasTotal 1 Páginas
PDF Descargar[ Datasheet 2N3957.PDF ]




Hoja de datos destacado

Número de piezaDescripciónFabricantes
2N3954N-Channel Dual Silicon Junction Field-Effect TransistorETC
ETC
2N3954Low NoiseMicross
Micross
2N3954ALow NoiseMicross
Micross
2N3955N-Channel Dual Silicon Junction Field-Effect TransistorETC
ETC

Número de piezaDescripciónFabricantes
SLA6805M

High Voltage 3 phase Motor Driver IC.

Sanken
Sanken
SDC1742

12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.

Analog Devices
Analog Devices


DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.


DataSheet.es    |   2020   |  Privacy Policy  |  Contacto  |  Buscar