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PDF 2N3955 Data sheet ( Hoja de datos )
| Número de pieza | 2N3955 | |
| Descripción | N-Channel Dual Silicon Junction Field-Effect Transistor | |
| Fabricantes | ETC | |
| Logotipo |  |
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01/99
B-5
2N3954, 2N3955, 2N3956
N-Channel Dual Silicon Junction Field-Effect Transistor
¥ Low and Medium Frequency
Differential Amplifiers
¥ High Input Impedance
Amplifiers
Absolute maximum ratings at TA = 25¡C
Reverse Gate Source & Reverse Gate Drain Voltage
Gate Current
Total Device Power Dissipation (each side)
@ 85°C Case Temperature (both sides)
Power Derating (both sides)
– 50 V
50 mA
250 mW
500 mW
4.3 mW/°C
At 25°C free air temperature:
Static Electrical Characteristics
Gate Source Breakdown Voltage
Gate Reverse Current
Gate Operating Current
Gate Source Voltage
Gate Source Cutoff Voltage
Gate Source Forward Voltage
Drain Saturation Current (Pulsed)
Dynamic Electrical Characteristics
Common Source Forward
Transconductance
Common Source Output Capacitance
Common Source Input Capacitance
Drain Gate Capacitance
Common Source Reverse
Transfer Capacitance
Noise Figure
Differential Gate Current
Saturation Drain Current Ratio
Differential Gate Source Voltage
Differential Gate Source Voltage
with Temperature
Transconductance Ratio
V(BR)GSS
IGSS
IG
VGS
VGS(OFF)
VGS(F)
IDSS
2N3954
2N3955
2N3956
Min Max Min Max Min Max Unit
– 50 – 50 – 50
– 100
– 100
– 100
– 500
– 500
– 500
– 50 – 50 – 50
– 250
– 250
– 250
– 4.2 – 4.2 – 4.2
– 0.5 – 4 – 0.5 – 4 – 0.5 – 4
– 1 – 4.5 – 1 – 4.5 – 1 – 4.5
222
0.5 5 0.5 5 0.5 5
V
pA
nA
pA
nA
V
V
V
V
mA
1000 3000 1000 3000 1000 3000 µS
gfs 1000 1000 1000 µS
gos 35 35 35 µS
Ciss 4 4 4 pF
Cdgo 1.5 1.5 1.5 pF
Crss 1.2 1.2 1.2 pF
NF 0.5 0.5 0.5 dB
| IG1 – IG2 |
IDSS1 /IDSS2
| VGS1 – VGS2|
0.95
10
1
5
10 10
0.95 1 0.95 1
10 15
nA
mV
∆VGS1 – VGS2
∆T
0.8
1
2
2.5
4 mV/°C
5 mV/°C
gfs1 /gfs2 0.97 1 0.97 1 0.97 1
Process NJ16
Test Conditions
IG = – 1µA, VDS = ØV
VGS = – 30V, VDS = ØV
VGS = – 30V, VDS = ØV
VDS = 20V, ID = 200 µA
VDS = 20V, ID = 200 µA
VDS = 20V, ID = 50 µA
VDS = 20V, ID = 200 µA
VDS = – 20V, IG = 1 nA
VDS = ØV, IG = 1 mA
VDS = 20V, VGS = ØV
TA = 125°C
TA = 125°C
VDS = 20V, VGS = ØV
VDS = 20V, VGS = ØV
VDS = 20V, VGS = ØV
VDS = 20V, VGS = ØV
Vdg = 10V, IS = ØA
VDS = 20V, VGS = ØV
VDS = 20V, VGS = ØV,
Rg = 10 MΩ
VDS = 20V, ID = 200µA
VDS = 20V, VGS = ØV
VDS = 20V, ID = 200µA
VDS = 20V, ID = 200µA
VDS = 20V, ID = 200µA
VDS = 20V, ID = 200µA
f = 1 kHz
f = 200 MHz
f = 1 kHz
f = 1 MHz
f = 1 MHz
f = 1 MHz
f = 100 Hz
TA = 125°C
TA = 25°C
to = – 55°C
TA = 25°C
to = +125°C
f = 1 kHz
TOÐ71 Package
See Section G for Outline Dimensions
Pin Configuration
1 Source, 2 Drain, 3 Gate,
5 Source, 6 Drain, 7 Gate
www.interfet.com
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287 FAX (972) 276-3375
1 page | ||
| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet 2N3955.PDF ] | |
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