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Número de pieza | FL7KM-12A | |
Descripción | Power MOSFET ( Transistor ) | |
Fabricantes | Renesas | |
Logotipo | ||
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Regarding the change of names mentioned in the document, such as Mitsubishi
Electric and Mitsubishi XX, to Renesas Technology Corp.
The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas
Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.)
Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi
Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names
have in fact all been changed to Renesas Technology Corp. Thank you for your understanding.
Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been
made to the contents of the document, and these changes do not constitute any alteration to the
contents of the document itself.
Note : Mitsubishi Electric will continue the business operations of high frequency & optical devices
and power devices.
Renesas Technology Corp.
Customer Support Dept.
April 1, 2003
Free Datasheet http://www.datasheet4u.com/
1 page GATE-SOURCE VOLTAGE
VS. GATE CHARGE
(TYPICAL)
20
TCh = 25°C
ID = 7A
16
12
VDS = 100V
8 200V
400V
4
0
0 20 40 60 80 100
GATE CHARGE Qg (nC)
MITSUBISHI Nch POWER MOSFET
FL7KM-12A
HIGH-SPEED SWITCHING USE
SOURCE-DRAIN DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
20
VGS = 0V
Pulse Test
16
12 TC = 125°C
75°C
25°C
8
4
0
0 0.8 1.6 2.4 3.2 4.0
SOURCE-DRAIN VOLTAGE VSD (V)
ON-STATE RESISTANCE VS.
CHANNEL TEMPERATURE
(TYPICAL)
101
VGS = 10V
7 ID = 3.5A
5 Pulse Test
3
2
100
7
5
3
2
10–1
–50
0
50 100 150
CHANNEL TEMPERATURE Tch (°C)
THRESHOLD VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
5.0
VDS = 10V
ID = 1mA
4.0
3.0
2.0
1.0
0
–50
0
50 100 150
CHANNEL TEMPERATURE Tch (°C)
BREAKDOWN VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
1.4
VGS = 0V
ID = 1mA
1.2
1.0
0.8
0.6
0.4
–50
0
50 100 150
CHANNEL TEMPERATURE Tch (°C)
101
7
5 D = 1.0
3
2
0.5
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
100 0.2
7
5 0.1
3 0.05
2
PDM
10–1
7
5
3
2
0.02
0.01
Single Pulse
tw
T
D= tw
T
10–2
10–42 3
5 710–32 3
5 710–22 3
5 710–12 3
5 7 100 2 3
5 7 101 2 3
5 7 102
PULSE WIDTH tw (s)
Sep. 2001
5 Page |
Páginas | Total 5 Páginas | |
PDF Descargar | [ Datasheet FL7KM-12A.PDF ] |
Número de pieza | Descripción | Fabricantes |
FL7KM-12A | Nch POWER MOSFET HIGH-SPEED SWITCHING USE | Powerex Power Semiconductors |
FL7KM-12A | Power MOSFET ( Transistor ) | Renesas |
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