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PDF 2SC5352 Data sheet ( Hoja de datos )
| Número de pieza | 2SC5352 | |
| Descripción | Silicon NPN Power Transistor | |
| Fabricantes | Inchange Semiconductor | |
| Logotipo |  |
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC5352
DESCRIPTION
·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 400V(Min)
·High Switching Speed
·High Reliability
APPLICATIONS
·Switching regulator and high voltage switching
applications.
·High speed DC-DC converter applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
600 V
VCEO
Collector-Emitter Voltage
400 V
VEBO
Emitter-Base voltage
7V
IC Collector Current-Continuous 10 A
ICM Collector Current-Peak
15 A
IBB Base Current-Continuous
Collector Power Dissipation
PC @ TC=25℃
TJ Junction Temperature
Tstg Storage Temperature Range
5A
80 W
150 ℃
-55~150
℃
isc Website：www.iscsemi.cn
Free Datasheet http://www.datasheet4u.com/
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 2SC5352.PDF ] | |
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