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PDF 2N3820 Data sheet ( Hoja de datos )

Número de pieza 2N3820
Descripción P-Channel General Purpose Amplifier
Fabricantes Fairchild Semiconductor 
Logotipo Fairchild Semiconductor Logotipo



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No Preview Available ! 2N3820 Hoja de datos, Descripción, Manual

2N3820
P-Channel General Purpose Amplifier
• This device is designed primarily for low level audio and general
purpose applications with high impedance signal sources.
• Sourced from process 89.
1 TO-92
1. Drain 2. Gate 3. Source
Epitaxial Silicon Transistor
Absolute Maximum Ratings* TC=25°C unless otherwise noted
Symbol
Parameter
VDG Drain-Gate Voltage
VGS Gate-Source Voltage
IGF Forward Gate Current
TSTG
Storage Temperature Range
* This ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Ratings
-20
20
10
-55 ~ 150
NOTES:
1) These rating are based on a maximum junction temperature of 150 degrees C.
2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Units
V
V
mA
°C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Condition
Off Characteristics
V(BR)GSS Gate-Source Breakdwon Voltage
IGSS
Gate Reverse Current
VGS(off) Gate-Source Cutoff Voltage
On Characteristics
IG = 10µA, VDS = 0
VGS = 10V, VDS = 0
VDS = -10V, ID = -10µA
IDSS
Zero-Gate Voltage Drain Current * VDS = -10V, VGS = 0
Small Signal Characteristics
gfs Forward Transfer Conductance
Ciss Input Capacitance
Crss Reverse Transfer Capacitance
* Pulse Test: Pulse Width 300ms, Duty Cycle 2%
VDS = -10V, VGS = 0, f = 1.0KHz
VDS = -10V, VGS = 0, f = 1.0KHz
VDS = -10V, VGS = 0, f = 1.0KHz
Min.
20
-0.3
800
Typ.
Max. Units
V
20 nA
8.0 V
-15 mA
5000
32
16
µmhos
pF
pF
Thermal Characteristics TA=25°C unless otherwise noted
Symbol
Parameter
PD Total Device Dissipation
Derate above 25°C
RθJC
Thermal Resistance, Junction to Case
RθJA
Thermal Resistance, Junction to Ambient
* Device mounted on FR-4 PCB 1.6” × 1.6” × 0.06”
Max.
350
2.8
125
357
Units
mW
mW/°C
°C/W
°C/W
©2002 Fairchild Semiconductor Corporation
Rev. A1, December 2002

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