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PDF 2SC5026 Data sheet ( Hoja de datos )
| Número de pieza | 2SC5026 | |
| Descripción | Silicon NPN Epitaxial Planar Type | |
| Fabricantes | Kexin | |
| Logotipo |  |
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SMD Type
Transistors
Silicon NPN Epitaxial Planar Type
2SC5026
Features
Low collector-emitter saturation voltage VCE(sat).
High collector-emitter voltage (Base open) VCEO
Mini Power type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the
magazine packing.
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Rating
80
80
5
1
1.5
1
150
-55 to +150
Unit
V
V
V
A
A
W
Electrical Characteristics Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector-base cutoff current
Forward current transfer ratio
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
Testconditons
VCBO IC = 10 ìA, IE = 0
VCEO IC = 1 mA, IB = 0
VEBO IE = 10 ìA, IC = 0
ICBO VCB = 40 V, IB = 0
hFE VCE = 2 V, IC = 100 mA
VCE(sat) IC = 500 mA, IB = 50 mA
VBE(sat) IC = 500 mA, IB = 50 mA
fT VCB = 10 V, IE = -50 mA, f = 200 MHz
Cob VCB = 10 V, IE = 0, f = 1 MHz
Min Typ Max Unit
80 V
80 V
5V
0.1 ìA
120 340
0.15 0.3 V
0.85 1.2 V
120 MHz
10 20 pF
hFE Classification
Marking
Rank
hFE
2A
RS
120 240
170 340
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| PDF Descargar | [ Datasheet 2SC5026.PDF ] | |
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