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PDF 2SC5022 Data sheet ( Hoja de datos )

Número de pieza 2SC5022
Descripción Silicon NPN Triple Diffused
Fabricantes Renesas 
Logotipo Renesas Logotipo



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No Preview Available ! 2SC5022 Hoja de datos, Descripción, Manual

To all our customers
Regarding the change of names mentioned in the document, such as Hitachi
Electric and Hitachi XX, to Renesas Technology Corp.
The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas
Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.)
Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand
names are mentioned in the document, these names have in fact all been changed to Renesas
Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and
corporate statement, no changes whatsoever have been made to the contents of the document, and
these changes do not constitute any alteration to the contents of the document itself.
Renesas Technology Home Page: http://www.renesas.com
Renesas Technology Corp.
Customer Support Dept.
April 1, 2003
Free Datasheet http://www.datasheet4u.com/

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2SC5022 pdf
Collector Power Dissipation
vs. Ambient Temperature
4
3
2
1
0 50 100 150 200
Ambient Temperature Ta (°C)
2SC5022
Maximum Safe Operation Area
100
1 shot pulse
50 ic(peak)
Ta = 25 °C
20 I Cmax
10
0.5
0.2
0.1
100 200 500 1000 2000 5000
Collector to Emitter Voltage VCE (V)
Typical Output Characteristics
20
2.0 mA
1.8 mA 1.6 mA
1.4 m1A.21m.0AmA
0.8 mA
0.6 mA
10 0.4 mA
0.2 mA
Pulse Test
Ta = 25 °C
IB = 0
0 5 10
Collector to Emitter Voltage VCE (V)
DC Current Transfer Ratio vs.
Collector Current
100
25 °C
75 °C
50
20
Ta = –25 °C
10
5
2 Pulse Test
VCE = 5 V
1
0.1 0.2 0.5 1
2
5 10
Collector Current I C (mA)
20
Free Datasheet http://www.datasheet4u.com/

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