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PDF 2N3811L Data sheet ( Hoja de datos )
| Número de pieza | 2N3811L | |
| Descripción | PNP SILICON DUAL TRANSISTOR | |
| Fabricantes | Microsemi Corporation | |
| Logotipo |  |
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PNP SILICON DUAL TRANSISTOR
Qualified per MIL-PRF-19500/336
Devices
2N3810
2N3810L
2N3810U
2N3811
2N3811L
2N3811U
TECHNICAL DATA
Qualified
Level
JAN
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
@ TA = +250C
Operating & Storage Junction Temperature Range
1) Derate linearly 2.86 mW/0C for TA > +250C
2) Derate linearly 3.43 mW/0C for TA > +250C
Symbol
VCEO
VCBO
VEBO
IC
PT
TJ, Tstg
Value
60
60
5.0
50
One Both
Section 1 Sections2
0.5 0.6
-65 to +200
Unit
Vdc
Vdc
Vdc
mAdc
W
0C
ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)
Characteristics
Symbol
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
IC = 10 µAdc
V(BR)CBO
Collector-Emitter Breakdown Current
IC = 10 mAdc
V(BR)CEO
Emitter-Base Breakdown Voltage
IE = 10 µAdc
V(BR)EBO
Collector-Base Cutoff Current
VCB = 50 Vdc
ICBO
Emitter-Base Cutoff Current
VEB = 4.0 Vdc
IEBO
Min.
60
60
5.0
TO-78*
*See appendix A
for package outline
Max.
Unit
Vdc
Vdc
Vdc
10 ηAdc
10 ηAdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 1 of 2
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 2N3811L.PDF ] | |
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