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PDF 2SC4545 Data sheet ( Hoja de datos )
| Número de pieza | 2SC4545 | |
| Descripción | Silicon NPN epitaxial planar type | |
| Fabricantes | Panasonic | |
| Logotipo |  |
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Power Transistors
2SC4545
Silicon NPN epitaxial planar type
For medium output power amplification
■ Features
• Allowing supply with the radial taping
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
50
40
5
1.5
3
1.5
150
−55 to +150
Unit
V
V
V
A
A
W
°C
°C
7.5±0.2
Unit: mm
4.5±0.2
0.65±0.1
0.7±0.1
1.15±0.2
0.85±0.1
1.0±0.1 0.8 C
0.7±0.1
1.15±0.2
0.8 C
0.5±0.1
0.8 C 1 2 3
0.4±0.1
2.5±0.2
2.5±0.2
1: Emitter
2: Collector
3: Base
MT-3-A1 Package
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio *
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
VCBO
VCEO
ICBO
ICEO
IEBO
hFE
VCE(sat)
VBE(sat)
fT
Cob
IC = 1 mA, IE = 0
IC = 2 mA, IB = 0
VCB = 20 V, IE = 0
VCE = 10 V, IB = 0
VEB = 5 V, IC = 0
VCE = 5 V, IC = 1 A
IC = 2 A, IB = 0.2 A
IC = 2 A, IB = 0.2 A
VCB = 5 V, IE = − 0.5 A, f = 200 MHz
VCB = 20 V, IE = 0, f = 1 MHz
Min Typ Max Unit
50 V
40 V
1 µA
100 µA
10 µA
50 220
1V
1.5 V
150 MHz
35 pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
P
Q
R
hFE
50 to 100
80 to 160
120 to 220
Publication date: January 2003
SJD00130BED
1
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| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet 2SC4545.PDF ] | |
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