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PDF 2SC4499S Data sheet ( Hoja de datos )
| Número de pieza | 2SC4499S | |
| Descripción | Silicon NPN Triple Diffused | |
| Fabricantes | Kexin | |
| Logotipo |  |
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SMD Type
Silicon NPN Triple Diffused
2SC4499S
Transistors
Features
High speed and high voltage switching
Absolute Maximum Ratings Ta = 25
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector peak current
Collector power dissipation
TC=25
Junction temperature
Storage temperature
TO-252
6.50+0.15
-0.15
5.30+0.2
-0.2
2.30+0.1
-0.1
0.50+0.8
-0.7
Unit: mm
0.80+0.1
-0.1
0.127
max
2.3
4.60+0.15
-0.15
0.60+0.1
-0.1
Symbol
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
Rating
500
400
10
0.5
1
0.75
10
150
-55 to +150
Unit
V
V
V
A
A
W
W
1 Base
2 Collector
3 Emitter
Electrical Characteristics Ta = 25
Parameter
Collector to emitter sustain voltage
Emitter to base breakdown voltage
Collector cutoff current
DC current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Turn on time
Storage time
Fall time
* 1 Pulse test.
Symbol
VCEO(sus)
V(BR)EBO
ICBO
ICEO
hFE
VCE(sat)
VBE(sat)
ton
tstg
tf
Testconditons
IC = 0.1 A, RBE = ,L = 100 mH
IE = 10 mA, IC = 0
VCB = 400 V, IE = 0
VCE = 350 V, RBE =
VCE = 5 V, IC = 0.25 A*1
VCE = 5 V, IC = 0.5 A*1
IC = 0.25 A, IB = 0.05 A*1
IC = 0.25 A, IB = 0.05 A*1
IC = 0.5 A, IB1 = -IB2 = 0.1 A,
VCC= 150 V
Min Typ Max Unit
400 V
10 V
20
ìA
50
12
5
1.0 V
1.5 V
1.0 ìs
2 ìs
1.0 ìs
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| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet 2SC4499S.PDF ] | |
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