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PDF 2SC4413 Data sheet ( Hoja de datos )
| Número de pieza | 2SC4413 | |
| Descripción | NPN Epitaxial Planar Silicon Transistor | |
| Fabricantes | Kexin | |
| Logotipo |  |
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SMD Type
TransistIoCrs
NPN Epitaxial Planar Silicon Transistor
2SC4413
Features
Adoption of FBET process.
High DC current gain.
Low collector-to-emitter saturation voltage.
High VEBO.
Small Cob.
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current(Pulse)
Base current
Collector dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
Rating
60
50
15
100
200
20
150
150
-55 to +150
Unit
V
V
V
mA
mA
mA
mW
1 Emitter
2 Base
3 Collector
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain
Gain bandwidth product
Output capacitance
Collector-to-emitter saturation voltage
Base-to-emitter saturation voltage
Collector-to-base breakdown voltage
Collector-to-emitter breakdown voltage
Emitter-to-base breakdown voltage
Marking
Marking
GY
Symbol
Testconditons
ICBO VCB = 40V, IE=0
IEBO VEB = 10V, IC=0
hFE VCE = 5V , IC = 10mA
fT VCE = 10V , IC = 10mA
Cob VCB = 10V, f = 1MHz
VCE(sat) IC = 50mA , IB = 1mA
VBE(sat) IC = 50mA , IB = 1mA
V(BR)CBO IC = 10ìA , IE = 0
V(BR)CEO IC = 1mA , RBE =
V(BR)EBO IE = 10ìA , IC = 0
Min Typ Max Unit
0.1 ìA
0.1 ìA
800 1500 3200
200 MHz
1.5 pF
0.1 0.5 V
0.8 1.1 V
60 V
50 V
15 V
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| PDF Descargar | [ Datasheet 2SC4413.PDF ] | |
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